Zobrazeno 1 - 10
of 468
pro vyhledávání: '"W. Schlapp"'
Publikováno v:
Journal of Crystal Growth. :1120-1125
Using solid-source MBE, strain-balanced quaternary AlGaInAs/AlGaInAs multiple quantum well (MQW) strucures have been grown and studied by photoluminescence (PL) and X-ray diffraction (XRD) measurements, showing high epitaxial quality and excellent ho
Autor:
Ronald Meisels, B. D. McCombe, I. Kulac, W. Schlapp, Friedemar Kuchar, G. Weimann, G. Sundaram
Publikováno v:
Surface Science. :55-58
We have studied the electron spin resonance (ESR) at millimeterwave frequencies in high mobility AlGaAs/GaAs samples for the first time at filling factors v < 1 outside the v = 1 resistance minimum. The magnetic field dependence of the ESR measured a
Autor:
C. Breitlow, G. Nachtwei, L. Bliek, H. Nickel, W Schlapp, L. Bartholomäus, M. Blöcker, A. Linke, R Losch, P. Svoboda, M. Cukr, Thomas Weimann, F. J. Ahlers
Publikováno v:
Semiconductor Science and Technology. 11:89-95
We investigated the local potential distribution over gated double-bridge structures patterned on GaAs/GaAlAs heterostructures. The current and potential distribution over the gated double-bridge devices was measured for several sets of filling facto
Autor:
J. Kuhn, R. Lösch, Heinz Schweizer, Hartmut Hillmer, W. Schlapp, F. Scholz, H. Bolay, C. Kaden, V. Hofsäß, Volker Härle
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 106:471-476
We report on the realization of gain coupled distributed feedback (GC-DFB) lasers using masked implantation enhanced intermixing (MIEI) in a full planar technology. The process requires only planar epitaxy steps to minimize ion straggling. We present
Publikováno v:
Semiconductor Science and Technology. 10:959-964
The current- and temperature-dependent broadening of the resistivity peaks in the region between adjacent quantum Hall plateaus is measured in two different GaAs/AlxGa1-xAs samples. Power law behaviour is found for temperature and current scaling. Co
Autor:
A Mattheus, H. Janning, Herbert Burkhard, S. Hansmann, F. Steinhagen, R G Gobel, Hartmut Hillmer, B Kempf, S. Mohrdiek, R. Lösch, W. Schlapp, H. Walter, H Scholl
Publikováno v:
Pure and Applied Optics: Journal of the European Optical Society Part A. 4:409-415
We have investigated the injection-locking (IL) technique as a useful tool to substantially reduce the chirp of directly modulated semiconductor lasers in standard fibre transmission systems. Chirpless transmission is presented for Fabry-Perot, bulk
Autor:
W. Schlapp, Thomas Prohaska, Gernot Friedbacher, Rainer Loesch, Heinrich. Nickel, Manfred Grasserbauer
Publikováno v:
Analytical Chemistry. 67:1530-1535
In this paper we describe the analytical benefits of in situ preparation and imaging under inert and reactive media using an AlGaAs/GaAs superlattice structure as a well-defined model sample. Imaging under inert organic liquids like toluene has been
Autor:
T. F. Albrecht, W. Schlapp, Wolfgang Stolz, J. H. H. Sandmann, Ernst O. Göbel, Hartmut Hillmer, Jochen Feldmann, R. Lösch
Publikováno v:
Applied Physics B Lasers and Optics. 60:459-467
Femtosecond pulses of a collinearly pumped Optical Parametric Oscillator (OPO) are applied for investigations of the carrier dynamics in ternary and quaternary semiconductor quantum wells. The design and the specifications of the OPO are given in det
Publikováno v:
Europhysics Letters (EPL). 30:111-116
We present a mechanism to excite intersubband transitions at normal incidence in quantum wells with a magnetic field applied parallel to the two-dimensional electron gas. In the Voigt configuration the light polarization perpendicular to the magnetic
Autor:
Thomas Weimann, F. J. Ahlers, R Losch, C. Breitlow, G. Nachtwei, L. Bliek, H. Nickel, W Schlapp
Publikováno v:
Semiconductor Science and Technology. 10:529-535
We investigated the local potential distribution on multibridge structures in high magnetic fields made on the basis of GaAs/GaAlAs heterostructures. The samples provide six bridges with different widths ranging from 2 to 100 mu m connected in parall