Zobrazeno 1 - 10
of 123
pro vyhledávání: '"W. S. Lau"'
Publikováno v:
AIP Advances, Vol 4, Iss 2, Pp 027120-027120-5 (2014)
Previously, Lau (one of the authors) pointed out that the deposition of an amorphous thin film by atomic layer deposition (ALD) on a substrate with nano-sized roughness probably has a surface smoothing effect. In this letter, polycrystalline zinc oxi
Externí odkaz:
https://doaj.org/article/208f8843307e446ebb01db9286bcecb8
Publikováno v:
Proceeding of Flexible Automation and Integrated Manufacturing 1998.
Akademický článek
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Publikováno v:
ECS Journal of Solid State Science and Technology. 6:N111-N116
Publikováno v:
2019 China Semiconductor Technology International Conference (CSTIC).
In this paper, convincing experimental data showing the surface smoothing effect of an amorphous high-k thin film deposited by atomic layer deposition (ALD) on a metastable metal film are provided even though there exist apparently contradictory data
Publikováno v:
Microelectronics Reliability. 61:78-81
To be compatible with the mainstream nano CMOS technology and to further increase the density and to reduce power consumption of non-volatile memory, high-k dielectric will become the major technology option for next generation non-volatile memory te
Publikováno v:
Microelectronics Reliability. 61:95-98
In this paper, we will report that the leakage current characteristics can be a function of the bottom electrode. The variation of the bottom tungsten electrode thickness can affect the leakage current characteristics of W/Ta 2 O 5 /W MIM capacitors
Autor:
W. S. Lau
Publikováno v:
2018 China Semiconductor Technology International Conference (CSTIC).
This paper explains the theory of the simultaneous existence of the hole and electron Smoluchoski effects. The proposed theory is then used to explain the polarity asymmetry in the current-voltage (I-V) characteristics of high-k MIM capacitors.
Autor:
W. S. Lau
Publikováno v:
2018 China Semiconductor Technology International Conference (CSTIC).
It is not obvious to correlate the leakage current with the electronic defect states in high-k dielectric materials. In this paper, the author will show the correlation between them. The engineering implication of this success will also be discussed.
Autor:
W S Lau
Publikováno v:
ULSI Front-End Technology: Covering from the First Semiconductor Paper to CMOS FINFET Technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab2dea52253290620e365619f3f6f30a
https://doi.org/10.1142/9789813222168_0003
https://doi.org/10.1142/9789813222168_0003