Zobrazeno 1 - 10
of 35
pro vyhledávání: '"W. S. Glaunsinger"'
Autor:
W. S. Glaunsinger, Michael George
Publikováno v:
Thin Solid Films. 245:215-224
The electrical properties and morphology of polycrystalline gold films prepared on alumina and silica substrates and epitaxial thin gold films deposited on mica are examined as a function of film thickness, substrate, structure and mercury adsorption
Autor:
W. S. Glaunsinger, M. J. McKelvy
Publikováno v:
Annual Review of Physical Chemistry. 41:497-523
Intercalation compounds are formed by the insertion of guest species into available sites in a host structure. Ideally, intercalation reactions are reversible, so that the original guest and host can be regenerated. Lamellar hosts provide the greates
Publikováno v:
Thin Solid Films. 189:59-72
Gold films approximately 1000 A thick exhibit a characteristic increase in resistance upon adsorption of mercury. Using scanning tunneling microscopy (STM), it has been observed that mercury adsorbs on the gold surface and subsequently migrates to gr
Autor:
Thomas Thundat, Stuart Lindsay, Larry A. Nagahara, P. I. Oden, Michael George, W. S. Glaunsinger
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:3537-3541
The morphological evolution of tantalum surfaces induced by scanning in an electrochemical cell have been investigated by scanning tunneling microscopy (STM). Repeated scanning over the same region was found to create a surface with a reduced peak‐
Autor:
P. K. Sinha, W. S. Glaunsinger
Publikováno v:
Journal of Materials Research. 5:1013-1016
The internal gettering of nickel in (100) silicon wafers implanted with 2.5 ⊠ 1015 argon-ions/cm2 at 280 keV has been studied by electron microscopy. Nickel deposited on the back surface is gettered by forming a discontinuous layer of nickel silici
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1491-1497
The resistance as a function of annealing temperature for thin gold films on a SiO2 layer on silicon (100) passes through a minimum near 600 °C for times at temperature ≤60 min. The structural changes associated with this electrical behavior have
Publikováno v:
Journal of Materials Research. 5:1017-1022
The simultaneous gettering of iron and nickel in a float-zone silicon wafer in the (100) orientation and implanted with 2.5 ⊠ 1015 argon ions/cm2 at 280 keV has been investigated. Iron was deposited on one half of the back surface of the wafer and
Publikováno v:
Inorganic Syntheses: Nonmolecular Solids, Volume 30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32aca4272b18016bb83ae1ea66aee042
https://doi.org/10.1002/9780470132616.ch33
https://doi.org/10.1002/9780470132616.ch33
Autor:
P. Colombet, W. S. Glaunsinger
Publikováno v:
physica status solidi (b). 128:141-149
The spinel spin-glasses Cu2xCr2xSb2−2xS4 are studied by electron paramagnetic resonance in the temperature range 4 to 560 K. The linewidths at high temperatures are much larger than expected from magnetic measurements, and for 0.25 ≦ x ≦ 0.50 t