Zobrazeno 1 - 10
of 83
pro vyhledávání: '"W. Rothemund"'
Publikováno v:
Journal of Crystal Growth. :1028-1032
Ternary Al x In 1-x As/Ga y In 1-y As heterostructures with a lattice mismatch up to 4% are grown on GaAs by molecular beam epitaxy. Two buffer layer concepts to compensate the lattice misfit between the Al x In 1-x As/Ga y In 1-y As layers and the G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20c53f3261831efec5c5a3658dd25746
https://doi.org/10.1016/s0022-0248(96)01013-5
https://doi.org/10.1016/s0022-0248(96)01013-5
Publikováno v:
Journal of Applied Physics. 79:6818-6825
Interdiffusion has been investigated in molecular-beam epitaxially (MBE)-grown, highly strained ln(ind 0.35)Ga(ind o.65)As/GaAs multiple quantum well (MQW) structures. Thermal intermixing and impurity-free interdiffusion (IFID) was induced via rapid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::875fdc16b32b55e663d10fcdfb827446
https://doi.org/10.1063/1.361503
https://doi.org/10.1063/1.361503
Publikováno v:
Materials Science and Technology. 11:840-844
The cap layer dependence and selectivity of impurity freeinterdiffusion in molecular beam epitaxially grown pseudomorphic InyGa1−yAs/GaAs multiple quantum well structures with y=0·2 and 0·35 have been studied. The influence of the cap layer compo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c33b1589c6dba31e4f845f4a93125b7e
https://doi.org/10.1179/mst.1995.11.8.840
https://doi.org/10.1179/mst.1995.11.8.840
Publikováno v:
Journal of Electronic Materials. 24:805-812
The dependence of the impurity-free interdiffusion process on the properties of the dielectric cap layer has been studied, for both unstrained GaAs/AlxGa1−xAs and pseudomorphic Iny Ga1−yAs/GaAs MQW structures grown by molecular beam epitaxy. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf3f5a970ff1f3c2382ddcff4fe40edf
https://doi.org/10.1007/bf02653328
https://doi.org/10.1007/bf02653328
Autor:
W. Rothemund, J. Wagner, H. Baumann, B. Dischler, R.E. Sah, John D. Ralston, Eric C. Larkins, G. Eichin
Publikováno v:
Thin Solid Films. 259:225-230
Silicon oxynitride thin films have been deposited at room temperature on GaAs using the PECVD technique with SiH 4 , N 2 O and Ar in a modified magnetron sputtering system. Typical deposition rates were on the order of 350 nm min −1 , substantially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58bfc91d736c7f6ac6d1a0e2721f3a1b
https://doi.org/10.1016/0040-6090(94)06446-6
https://doi.org/10.1016/0040-6090(94)06446-6
Autor:
J. Rosenzweig, W. Rothemund, John D. Ralston, Ignacio Esquivias, M. Baeumler, Eric C. Larkins, W. Benz, A. Schonfelder, J. Fleissner, S. Weisser, W. Jantz
Publikováno v:
IEEE Photonics Technology Letters. 7:16-19
We present results from In/sub 0.35/Ca/sub 0.65/As-GaAs 4 QW lasers whose Al/sub 0.8/Ga/sub 0.2/As binary short-period superlattice (SPSL) cladding layers were grown at either 700/spl deg/C or 620/spl deg/C. The threshold current densities (J/sub th/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a4597ee64ba23c01c8249896230b4b5
https://doi.org/10.1109/68.363390
https://doi.org/10.1109/68.363390
Publikováno v:
Journal of Crystal Growth. 127:541-545
We have grown pseudomorphic InsubyGasub1-yAs multiple quantum wells (MQWs) with y is equal 0.20 and y is equal 0.35, using four MBE and one migration-enhanced epitaxy (MEE) growth conditions. MQWs grown by MBE at 450 degree C had the narrowest photol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::463ab736ab6401ee7179e633d7e1cc40
https://doi.org/10.1016/0022-0248(93)90679-q
https://doi.org/10.1016/0022-0248(93)90679-q
Publikováno v:
Journal of Applied Physics. 72:2941-2946
The anisotropic conduction of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high‐electron‐mobility transistor (HEMT) structures has been investigated. The heterostructures were grown by molecular‐beam epitaxy on (100) GaAs substrates. The thickness o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1464b459e9925fa09a83c27e0b243407
https://doi.org/10.1063/1.351497
https://doi.org/10.1063/1.351497
Autor:
Donat Josef As, Kurt Hingerl, Wolfgang Jantsch, Helmut Sitter, W. Rothemund, P. Juza, M. Lang, Markus Pessa, J. Lilja
Publikováno v:
Journal of Crystal Growth. 117:341-347
Luminescence and photoconductivity measurements were performed on MBE-grown ZnSe layers with various arsenic concentrations. Two shallow acceptor levels with binding energies of 125 and 260 meV were found. The acceptor binding energies were determine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af09909e1d3a3ba15ba068bb83c20679
https://doi.org/10.1016/0022-0248(92)90772-b
https://doi.org/10.1016/0022-0248(92)90772-b
Publikováno v:
Journal of Crystal Growth. 101:226-231
A double etch process has been developed, based on the well-known Inoue etch solution, in order to achieve greater control over the generation of etch pits on CdTe crystals. A comparison of the resulting etch patterns with those generated by applying
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed5db98b4ecbaec87a88897a85dd39e7
https://doi.org/10.1016/0022-0248(90)90971-m
https://doi.org/10.1016/0022-0248(90)90971-m