Zobrazeno 1 - 10
of 25
pro vyhledávání: '"W. Robert Sinclair"'
Publikováno v:
Journal of Applied Physics. 69:1107-1109
The process of excimer laser ablation has been studied while varying the laser fluence from 0.237 to 19.1 J/cm2. Ion time‐of‐flight, total charge, target etch depth per pulse, and etch volume per pulse have been measured. Results indicate a maxim
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2:1257-1260
Previous studies of the preparation of NbN by reactive sputtering have employed Ar–N2 gas mixtures. We have shown that high‐Tc films (Tc=14.2 K) can be prepared on substrates held near room temperature by sputtering a Nb target in a dc s‐gun ma
Publikováno v:
Thermochimica Acta. 30:225-231
The reaction between SiCl4 and O2 at 1 atm between 25 and 1200°C has been followed by mass spectrometry. Below 600°C no reaction with O2 is noted. Above 600°C the reaction proceeds in two steps. Between 800 and 1000°C the 28Si/32O2 peak height ra
Publikováno v:
Solar Energy Materials. 1:249-255
The chemical nature of indium-tin oxide (ITO)/indium phosphide junctions prepared via rf sputtering of ITO onto InP single crystal substrates is investigated by ion microprobe analysis. At elevated substrate temperature (250°C) Sn penetrates into th
Autor:
W. Robert Sinclair, F. G. Peters
Publikováno v:
Journal of Vacuum Science and Technology. 2:178-181
A cylindrical geometry sputtering apparatus and associated fixtures have been described which feature ease of construction and use. Because of the high symmetry of the apparatus, films can be deposited simultaneously on different substrates at differ
Autor:
W. Robert Sinclair, F. G. Peters
Publikováno v:
Journal of the American Ceramic Society. 46:20-23
A method of depositing oxide glass films on a substrate is presented. The method involves the sputtering of a metal or semiconductor electrode in an oxidizing atmosphere (so-called reactive sputtering). The films obtained are of good quality, unstrai
Publikováno v:
Applied Physics Letters. 29:21-23
Sputter deposition of low‐resistivity (0.02 Ω cm) layers of SnO2‐doped In2O3 onto AlxGa1−xAs results in heterojunction barriers to either n‐ or p‐type material. Low‐loss AlxGa1−xAs waveguides with SnO2‐In2O3 cladding have been fabric
Publikováno v:
Journal of The Electrochemical Society. 125:950-952
Publikováno v:
Applied Physics Letters. 41:764-766
We have developed the ability to deposit niobium nitride thin films routinely having a superconducting transition temperature of 14 K by dc reactive magnetron sputtering onto substrates held near room temperature (Ts
Autor:
W. Robert Sinclair, James E. Griffiths
Publikováno v:
Applied Physics Letters. 39:551-553
Raman spectra of thin film GexSe1−x (x = 0.1, 0.33) glasses shows them to be structurally and compositionally similar on a molecular scale whether prepared by evaporation or sputtering techniques. Their sensitivity as silver‐doped photoresist mat