Zobrazeno 1 - 3
of 3
pro vyhledávání: '"W. R. Frensley"'
Autor:
M. A. Reed, J. H. Luscombe, J. N. Randall, W. R. Frensley, R. J. Aggarwal, R. J. Matyi, T. M. Moore, A. E. Wetsel
Publikováno v:
Science and Engineering of One-and Zero-Dimensional Semiconductors ISBN: 9781468457353
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021eecef52e11de744f823f098559d91
https://doi.org/10.1007/978-1-4684-5733-9_16
https://doi.org/10.1007/978-1-4684-5733-9_16
Autor:
C. H. Yang, A. Seabaugh, M. A. Reed, J. N. Randall, J. H. Luscombe, W. R. Frensley, R. T. Bate
The results of the first year of research on and development of resonant tunneling transistors are described. A true resonant tunneling transistor consists of a single-well, double-barrier resonant tunneling diode structure to which a third terminal,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cea5a4a9a977aa7a2879937a603d70e1
https://doi.org/10.21236/ada201948
https://doi.org/10.21236/ada201948