Zobrazeno 1 - 10
of 837
pro vyhledávání: '"W. R. Frensley"'
Autor:
M. A. Reed, J. H. Luscombe, J. N. Randall, W. R. Frensley, R. J. Aggarwal, R. J. Matyi, T. M. Moore, A. E. Wetsel
Publikováno v:
Science and Engineering of One-and Zero-Dimensional Semiconductors ISBN: 9781468457353
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021eecef52e11de744f823f098559d91
https://doi.org/10.1007/978-1-4684-5733-9_16
https://doi.org/10.1007/978-1-4684-5733-9_16
Autor:
Juárez, Beatriz H.1, Liz-Marzán, Luis M.2,3
Publikováno v:
Revista Española de Física. oct-dic2023, Vol. 37 Issue 4, p57-68. 12p.
Autor:
Hod, Oded1 (AUTHOR) odedhod@tauex.tau.ac.il, Kronik, Leeor2 (AUTHOR) leeor.kronik@weizmann.ac.il
Publikováno v:
Israel Journal of Chemistry. Aug2023, Vol. 63 Issue 7/8, p1-12. 12p.
Publikováno v:
Journal of Applied Physics; May2023, Vol. 133 Issue 17, p1-10, 10p
Autor:
Wang, Yu, Simine, Lena
Publikováno v:
Journal of Chemical Physics; 3/21/2023, Vol. 158 Issue 11, p1-8, 8p
Autor:
C. H. Yang, A. Seabaugh, M. A. Reed, J. N. Randall, J. H. Luscombe, W. R. Frensley, R. T. Bate
The results of the first year of research on and development of resonant tunneling transistors are described. A true resonant tunneling transistor consists of a single-well, double-barrier resonant tunneling diode structure to which a third terminal,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cea5a4a9a977aa7a2879937a603d70e1
https://doi.org/10.21236/ada201948
https://doi.org/10.21236/ada201948
Autor:
Sinha, Soumendu1,2 soumendu@ceeri.res.in, Pal, Tapas1
Publikováno v:
Electrochemical Science Advances. Oct2022, Vol. 2 Issue 5, p1-50. 50p.
Publikováno v:
Journal of Applied Physics; 9/28/2022, Vol. 132 Issue 12, p1-22, 22p
Autor:
Ghosh, Arghya, Jana, Subrata, Rauch, Tomáš, Tran, Fabien, Marques, Miguel A. L., Botti, Silvana, Constantin, Lucian A., Niranjan, Manish K., Samal, Prasanjit
Publikováno v:
Journal of Chemical Physics; 9/28/2022, Vol. 157 Issue 12, p1-10, 10p