Zobrazeno 1 - 10
of 38
pro vyhledávání: '"W. Pyka"'
Autor:
W Krafczyk, W Pyka, Andrea Ehrmann, Z Sokół, M Jędrzejowski, A. Bzymek, Tomasz Blachowicz, O Tokarczyk, M Chudy
Publikováno v:
Journal of Physics: Conference Series. 1950:012019
This study analyzes the acceleration of the arms of a dual system of manipulators that aim to achieve the minimum distance by mimicking the process of approaching spacecraft that are trying to connect. The research was performed simultaneously on a r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25bfa5ddae9a30767dfed31a88394fdb
https://doi.org/10.1088/1742-6596/1950/1/012019
https://doi.org/10.1088/1742-6596/1950/1/012019
Publikováno v:
Acta Physica Polonica A. 118:1250-1253
The paper presents the research on waveguide sensors based on multimode interference structures. In the modeled systems, the applied sensor layer was used as the cover of the multimode section. The cover of the multimode section can be made of materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e98e612dd7c4c842ed56f57ad9ffae6
https://doi.org/10.12693/aphyspola.118.1250
https://doi.org/10.12693/aphyspola.118.1250
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 22:285-292
Filling high aspect ratio trenches is an essential manufacturing step for state of the art memory cells. Understanding and simulating the transport and surface processes enables one to achieve voidless filling of deep trenches, to predict the resulti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92f94e12c14397ebd2594371f851f678
https://doi.org/10.1109/tcad.2002.807879
https://doi.org/10.1109/tcad.2002.807879
Publikováno v:
Microelectronic Engineering. 53:429-432
We successfully optimized the sidewall slope of a 2.5@mm thick photoresist. We found that the sidewall slope strongly depends on the pattern size and thickness of the photoresist. By optimizing the hard-bake process conditions it was possible to mini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78731bddd036dca3765bb86aa8c670cf
https://doi.org/10.1016/s0167-9317(00)00349-x
https://doi.org/10.1016/s0167-9317(00)00349-x
Publikováno v:
Microelectronic Engineering. 53:449-452
We present a rigorous, three-dimensional model for the simulation of resist exposure and development. The development simulation is based on a cellular surface movement algorithm and benchmarked for several prototypical test cases. Exposure simulatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8580f20b21fa51d1a05c3cee8a29753d
https://doi.org/10.1016/s0167-9317(00)00353-1
https://doi.org/10.1016/s0167-9317(00)00353-1
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 18:1741-1749
For wafer sizes in state of-the-art semiconductor manufacturing ranging up to 300 mm, the uniformity of processes across the wafer becomes a very important issue. We present a fully three-dimensional model for the feature scale simulation of continuu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::979e901570fa7196ce16b1102648b6f3
https://doi.org/10.1109/43.811323
https://doi.org/10.1109/43.811323
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 17:1148-1159
Integrated circuits have evolved to a stage where interconnections significantly limit their performance and functional complexity. We introduce a set of tools to perform highly accurate three-dimensional capacitance and resistance/thermal calculatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c9ac471dd6f04a8e1e73ca5de6add01
https://doi.org/10.1109/43.736187
https://doi.org/10.1109/43.736187
Publikováno v:
Journal of Technology Computer Aided Design TCAD. :1-39
The reduction of computing time without loss of accuracy is a very important task for three-dimensional process simulation. We present new approaches for fast and stable simulation of etching and deposition processes by introducing non spherical stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaad2127052a565f65f991c1beb50d21
https://doi.org/10.1109/tcad.1996.6449177
https://doi.org/10.1109/tcad.1996.6449177
Publikováno v:
Scopus-Elsevier
We present a three-dimensional model for the simulation of continuum transport and reaction determined high pressure CVD processes. Our approach allows simulations over arbitrary geometries such as structures resulting from nonuniform underlying PVD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e54c6829a450ff39c7d9439e08567b8
https://doi.org/10.1109/sispad.1999.799295
https://doi.org/10.1109/sispad.1999.799295
Publikováno v:
Simulation of Semiconductor Processes and Devices 2001 ISBN: 9783709172780
Experiments of As-doped poly-silicon deposition have shown that under certain process conditions step coverages > 1 can be achieved. We have developed a new model for the simulation of As-doped poly-silicon deposition, which takes into account surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddc9f17de53cdb8085b971286500552e
https://doi.org/10.1007/978-3-7091-6244-6_27
https://doi.org/10.1007/978-3-7091-6244-6_27
