Zobrazeno 1 - 10
of 29
pro vyhledávání: '"W. Pok"'
Autor:
M. Füchsle, Andreas Fuhrer, Giordano Scappucci, Thilo Reusch, D.L. Thompson, F. J. Rueß, Michelle Y. Simmons, W. Pok
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:1006-1009
We study the low temperature electrical characteristics of planar, highly phosphorus-doped nanodots. The dots are defined by lithographically patterning an atomically flat, hydrogenated Si(1 0 0):H surface using a scanning-tunneling-microscope (STM),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16643cc5bc3d668f72d7aceb508f15a9
https://doi.org/10.1016/j.physe.2007.08.057
https://doi.org/10.1016/j.physe.2007.08.057
Autor:
M. Mitic, M. Füchsle, Giordano Scappucci, Thilo Reusch, Michelle Y. Simmons, W. Pok, F. J. Rueß, D.L. Thompson
Publikováno v:
Journal of Scanning Probe Microscopy. 2:10-14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c83f5632b15f08755161fab134fe64e
https://doi.org/10.1166/jspm.2007.005
https://doi.org/10.1166/jspm.2007.005
Autor:
Thilo Reusch, Kuan Eng Johnson Goh, Giordano Scappucci, Alex R. Hamilton, W. Pok, F. J. Rueß, Michelle Y. Simmons, L. Oberbeck, Matthew J. Butcher
Publikováno v:
Small. 3:563-567
was developed, similar to opticallithography found in the semiconductor industry and elec-tron-beam lithography used in the research environment.The basic concept involves passivating the Si surface withhydrogen atoms, thus forming an atomic monolaye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d704e896f3184d874a3e728e9a03b059
https://doi.org/10.1002/smll.200600680
https://doi.org/10.1002/smll.200600680
Publikováno v:
IEEE Transactions On Nanotechnology. 6:213-217
We report on the ability to fabricate arrays of planar, nanoscale, highly doped phosphorus dots in silicon separated by source and drain electrodes using scanning tunneling microscope lithography. We correlate ex situ electrical measurements with sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4693a483161ed171987a1bc67af31fd
https://doi.org/10.1109/tnano.2007.891823
https://doi.org/10.1109/tnano.2007.891823
Publikováno v:
Nanotechnology. 24(4)
Three-dimensional (3D) control of dopant profiles in silicon is a critical requirement for fabricating atomically precise transistors. We demonstrate conductance modulation through an atomic scale 3?nm wide ?-doped silicon?phosphorus wire using a ver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4a18bdd032561e79cf033428535aa7a
https://pubmed.ncbi.nlm.nih.gov/23291418
https://pubmed.ncbi.nlm.nih.gov/23291418
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 36:012036
Biomass waste has been abundantly available in Malaysia since the booming of palm oil industry. In order to tackle this issue, gasification is seen a promising technology to convert waste into energy. In view of the heat requirement for endothermic g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb7c63ba94c8e6510f2b3a5e091227e8
https://doi.org/10.1088/1755-1315/36/1/012036
https://doi.org/10.1088/1755-1315/36/1/012036
Publikováno v:
Physical Review B. 75
We explore the influence of atomically sharp phosphorus doping profiles in laterally patterned tunnel junctions in crystalline silicon on the electronic transport properties at low temperatures. Atomically precise patterning is realized using scannin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bec2c94b06d14c75c289269b98690f8d
https://doi.org/10.1103/physrevb.75.121303
https://doi.org/10.1103/physrevb.75.121303
Publikováno v:
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004..
Nanoindentation is used to investigate the effects of mechanical deformation on systems of silicon nanocrystals (Si-nc) embedded in SiO 2. The process is found to introduce non-radiative defects to the crystals which quench their luminescence in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83b6fe04bb5bebf8d86e91923f197415
https://doi.org/10.1109/commad.2004.1577559
https://doi.org/10.1109/commad.2004.1577559
Autor:
Kuan Eng Johnson Goh, Thilo Reusch, W.-C. N. Lo, Michelle Y. Simmons, Sarah R. McKibbin, W. Pok
Publikováno v:
Journal of Applied Physics. 104:066104
We present a combined scanning tunneling microscopy (STM) and low-temperature magnetotransport study of Si:P δ-doped layers on vicinal Si(001) substrates. The substrates were misoriented 4° toward [110] resulting in a high step density on the start
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e644cdda1a39dd1f575e9910e0cd89c
https://doi.org/10.1063/1.2977750
https://doi.org/10.1063/1.2977750
Publikováno v:
Applied Physics Letters. 92:052101
We investigate the conduction properties of an embedded, highly phosphorus-doped nanowire with a width of 8nm lithographically defined by scanning tunneling microscope based patterning of a hydrogen-terminated Si(100):H surface. Four terminal I-V mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9536e03466b5feac429ce1fdba6794b
https://doi.org/10.1063/1.2840182
https://doi.org/10.1063/1.2840182