Výsledky vyhledávání - "W. Passenberg"

Polarization beam splitter building block for InP based generic photonic integrated circuits

Autor: Francisco M. Soares, W. Passenberg, M. Baier, N. Grote, Martin Moehrle, T. Gaertner

Publikováno v: 26th International Conference on Indium Phosphide and Related Materials (IPRM).

We demonstrate a fully integrated polarization beam splitter with a polarization extinction ratio above 25dB for both polarization states and an insertion loss of 2.5dB. The footprint of the device including electrical contacts is 0.4×2mm 2 . A Mach

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::825b8c88fd2295a791721403a3e38df8
https://doi.org/10.1109/iciprm.2014.6880576

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1300nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots

Autor: A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, C. Moeller, Zh. I. Alferov, Nikolai A. Maleev, E. Pawlowski, Dieter Bimberg, A. V. Sakharov, V. M. Ustinov, A. F. Tsatsul’nikov, Nikolai N. Ledentsov, W. Passenberg, A. E. Zhukov, H. Kuenzel

Publikováno v: Journal of Crystal Growth. :1146-1150

Basic development steps towards the molecular beam epitaxy growth of AlGaAs/GaAs microcavity structures are presented, which contain self-organized InAs/GaInAs quantum dots as the active medium. The emission wavelength of these structures can be cont

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fa4afd56b83890f638bc802c51f01062
https://doi.org/10.1016/s0022-0248(01)01004-1

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InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaAs Substrates Emitting in the 1.25-1.33 ?m Wavelength Range

Autor: Dieter Bimberg, H. Künzel, I. L. Krestnikov, A. V. Sakharov, A. F. Tsatsul’nikov, W. Passenberg, C. Möller, E. Pawlowski, Nikolai A. Maleev, Zh. I. Alferov, S. S. Mikhrin, Nikolai N. Ledentsov, V. M. Ustinov, A. R. Kovsh

Publikováno v: physica status solidi (b). 224:803-806

AlGaAs/GaAs microcavity structures with InAs/InGaAs quantum dot (QD) active regions were grown by molecular beam epitaxy (MBE) on GaAs substrates and their optical characteristics were studied. Methods for the optimization of optical emission propert

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1e10b94ca4cb2925ab0bda52b43791e2
https://doi.org/10.1002/(sici)1521-3951(200104)224:3<803::aid-pssb803>3.0.co

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Surface preparation for molecular beam epitaxy-regrowth on metalorganic vapour phase epitaxy grown InP and InGaAsP layers

Autor: W. Schlaak, W. Passenberg

Publikováno v: Journal of Crystal Growth. 173:266-270

MBE regrowth on MOVPE grown InP and InGaAsP (1.06 μm) layers was found to demand appropriate surface treatment for not sacrificing epitaxial growth performance. Wet chemical etching using a sulphuric acid based solution as well as surface oxidation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b096a25d075aaaad6e97094e835b88f2
https://doi.org/10.1016/s0022-0248(96)00848-2

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1480nm InGaAsP LOC broad-area-lasers with >18W pulsed output power at 20°C

Autor: Martin Mohrle, W. Passenberg, Wolfgang Rehbein, D. Fendler, N. Grote, M. Spiegelberg

Publikováno v: 2013 International Conference on Indium Phosphide and Related Materials (IPRM).

1480nm InGaAsP large optical cavity broad-area laser diodes were developed and optimized for pulsed operation showing optical output power of >18W at 20°C. Furthermore the μs pulse duration regime was investigated with respect to power saturation a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::029f074b4e08a07d3b5365732eb8c132
https://doi.org/10.1109/iciprm.2013.6562617

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Diamagnetic shifts of subbands and the quantum Hall effect of silicon delta -doped Ga0.47In0.53As layers

Autor: G. Nachtwei, W Passenberg, H. Kunzel, S. Heide

Publikováno v: Journal of Physics: Condensed Matter. 5:1091-1098

Magnetotransport investigations of silicon delta -doped Ga0.47In0.53As layers with different electron densities were performed in tilted magnetic fields up to 12 T. The conduction electrons of the samples showed two-dimensional behaviour determined b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5323b5b9baf226ae6fd4e01c21db2574
https://doi.org/10.1088/0953-8984/5/8/010

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On the potential of δ-doping for AlInAs/GaInAs HEMTs grown by MBE

Autor: J. Böttcher, H. Kunzel, H.-G. Bach, W. Passenberg

Publikováno v: Journal of Crystal Growth. 127:716-719

A theoretical and experimental comparison of homogeneously doped and δ-doped electron supply regions in AlInAs/GaInAs HEMT structures is presented providing optimized design parameters. The electrical material characteristics in dependence of the do

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::108eee76b22a629825d962ff5fe7e93a
https://doi.org/10.1016/0022-0248(93)90718-c

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Optical coupling of planar III-V pin photodiodes and SOI waveguides using an integrated BCB prism

Autor: Timo Aalto, Mikko Harjanne, D. Schmidt, Sami Ylinen, L. Moerl, Margit Ferstl, Markku Kapulainen, W. Passenberg, Ruiyong Zhang

Publikováno v: Moerl, L, Passenberg, W, Ferstl, M, Schmidt, D, Zhang, R, Aalto, T, Harjanne, M, Kapulainen, M & Ylinen, S 2010, Optical coupling of planar III-V pin photodiodes and SOI waveguides using an integrated BCB prism . in Proceedings : 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 . IEEE Institute of Electrical and Electronic Engineers, pp. 401-404, 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010, Kagawa, Japan, 31/05/10 . https://doi.org/10.1109/ICIPRM.2010.5516229

Vertical hybrid integration of photodiodes (PD) and silicon-on-insulator (SOI) waveguides has been investigated. To this end, InP-based planar detectors were used onto which a polymer prism was formed to turn the light beam into the vertical directio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a8fe1ae3600e0304f7cdef0ed4ab1a4
https://doi.org/10.1109/iciprm.2010.5516229

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Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding

Autor: Timo Aalto, Jyrki Ollila, W. Passenberg, Markku Kapulainen, L. Morl, Sami Ylinen, Mikko Harjanne

Publikováno v: Harjanne, M, Kapulainen, M, Ylinen, S, Aalto, T, Ollila, J, Mörl, L & Passenberg, W 2010, Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding . in G C Righini (ed.), Silicon Photonics and Photonic Integrated Circuits II ., 77190S, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 7719, Silicon Photonics and Photonic Integrated Circuits II, Brussels, Belgium, 12/04/10 . https://doi.org/10.1117/12.854403

In this paper we present the integration of an InP-based photodetector with silicon-on-insulator (SOI) waveguides using thermocompression bonding. A BCB prism integrated on top of the light-sensitive area of a planar detector (PD) chip deflects the l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9603eaf8ae6f89db56e30f2fb6ad872
https://doi.org/10.1117/12.854403

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Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells

Autor: Nikolai N. Ledentsov, B. V. Volovik, H. Kuenzel, A. R. Kovsh, W. Passenberg, V. M. Ustinov

Publikováno v: Technical Physics Letters. 26:443-445

The properties of InGaAsN/GaAs heterostructures with quantum wells on GaAs substrates were studied. The GaAsN layers containing InGaAsN quantum wells with a high (exceeding 1%) nitrogen concentration were obtained. The long-wavelength emission in the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdbfef8465cc27a50d66c593f12abd42
https://doi.org/10.1134/1.1262873

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