Zobrazeno 1 - 10
of 16
pro vyhledávání: '"W. P. Dumke"'
Autor:
Enrique Calleja, L. Osterling, W. P. Dumke, Christina Marie Knoedler, Moty Heiblum, I. M. Anderson
Publikováno v:
Physical Review Letters. 56:2854-2857
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::346fc3eac539574fc253a42c4c9c176d
https://doi.org/10.1103/physrevlett.56.2854
https://doi.org/10.1103/physrevlett.56.2854
Publikováno v:
Physical Review B. 5:2978-2985
Measurement and analysis of indirect interband optical absorption in GaP. Deviations from a simple indirect absorption law are shown to be consistent with those given by a model which takes into account both the variation of the energy denominators w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66bbc35a7688bcdbeff0234a44004d60
https://doi.org/10.1103/physrevb.5.2978
https://doi.org/10.1103/physrevb.5.2978
Autor:
W. P. Dumke
Publikováno v:
Physical Review B. 2:987-996
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79141bbf709ba4cb789af955fed5b7f9
https://doi.org/10.1103/physrevb.2.987
https://doi.org/10.1103/physrevb.2.987
Publikováno v:
Physical Review B. 1:4668-4673
The infrared absorption in $n$-type InP was studied as a function of free-carrier concentration from 3.5\ifmmode\times\else\texttimes\fi{}${10}^{17}$ to \ensuremath{\sim} ${10}^{19}$ ${\mathrm{cm}}^{\ensuremath{-}3}$ in the spectral range of 10 \ensu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc07a71a29f281125cf6ab08c9d4c010
https://doi.org/10.1103/physrevb.1.4668
https://doi.org/10.1103/physrevb.1.4668
Autor:
W. P. Dumke
Publikováno v:
Physical Review. 132:1998-2002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5454f35eb6bda4d51c5823c0d8ab354d
https://doi.org/10.1103/physrev.132.1998
https://doi.org/10.1103/physrev.132.1998
Autor:
W. P. Dumke
Publikováno v:
Applied Physics Letters. 42:196-198
The luminescence data of Schmid, Thewalt, and Dumke on heavily doped n‐type Si have been analyzed and compared with the published band‐gap shrinkage results of infrared absorption measurements and of transport measurements in bipolar transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cfe424978f1a8180a500e14285c140e
https://doi.org/10.1063/1.93879
https://doi.org/10.1063/1.93879
Publikováno v:
Applied Physics Letters. 52:654-656
The mobility of electrons in p‐type GaAs, μPn has been determined by measuring the common emitter cutoff frequency fT of heterojunction bipolar transistors with a wide, uniformly doped base. At 295 K, μPn =1150 cm2/(V s) is found for a hole conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5db2a33447397f56f7941bbdb69a5781
https://doi.org/10.1063/1.99395
https://doi.org/10.1063/1.99395
Publikováno v:
Applied Physics Letters. 13:421-423
The position of the (1, 0, 0) minima in InP are determined from measurements in the region of interconduction band absorption. Direct transition electroluminescence in the In1−xGaxP alloys is observed over a range of alloys up to x = 0.8 and photon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9e94eb58547234eb2ce053d8957cf20
https://doi.org/10.1063/1.1652500
https://doi.org/10.1063/1.1652500
Autor:
W. P. Dumke, S. Porowski, James Cleary Mcgroddy, J.E. Smith, Marshall I. Nathan, William Paul
Publikováno v:
IBM Journal of Research and Development. 13:580-582
The effect of hydrostatic pressure on the Gunn effect (high pressures) and bulk avalanche breakdown (low pressures) in n-InSb is studied. The measured generation rates of electron-hole pairs at 77°K and 195°K at several pressures are compared with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b09e7936e04b993dcc996d6c957becc9
https://doi.org/10.1147/rd.135.0580
https://doi.org/10.1147/rd.135.0580