Zobrazeno 1 - 8
of 8
pro vyhledávání: '"W. N. Borle"'
Publikováno v:
Journal of Electronic Materials. 23:1349-1357
Below gap optical losses in as-grown n-type CdTe crystals were analyzed in terms of free carrier absorption and Mie extinction due to Te precipitates. Experimental absorption spectra measured between 2 to 20 μm exhibited the well-known free carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6cf07fb8b654e58c447dfa9f3a4716d
https://doi.org/10.1007/bf02649901
https://doi.org/10.1007/bf02649901
Publikováno v:
Journal of Electronic Materials. 21:1001-1016
A thermodynamic calculation is presented which explains the origin of often reported large stress fields in and around Te precipitates and associated punching of dislocation loops in star like patterns. The calculation is based on the consideration t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b464700778d3e9c5e5ba349e885782fe
https://doi.org/10.1007/bf02684210
https://doi.org/10.1007/bf02684210
Publikováno v:
IETE Journal of Research. 10:207-211
Development of suitable materials for use in thermoelectric refrigeration is under progress. In this process the electrical resistivity and the seebeck coefficient of the solid solutions Bi2Te3 (80 per cent)+Bi2Se3 (20 per cent) and Bi2Te3 (26 per ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecede2289c26f05ce5b9cb76f921adae
https://doi.org/10.1080/03772063.1964.11485034
https://doi.org/10.1080/03772063.1964.11485034
Publikováno v:
Journal of Physics D: Applied Physics. 4:1207-1209
The total emissivity of four samples of silicon of different resistivities is measured in the temperature range 880-1550 K. The emissivity depends on carrier concentration in the silicon samples. As the temperature increases the emissivity increases,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f161bf45694668b51870657643123239
https://doi.org/10.1088/0022-3727/4/8/323
https://doi.org/10.1088/0022-3727/4/8/323
Autor:
W. N. Borle
Publikováno v:
Journal of Applied Physics. 41:3184-3186
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8daba594cf3b4bb91ac7465203a848b5
https://doi.org/10.1063/1.1659389
https://doi.org/10.1063/1.1659389
Autor:
R. K. Bagai, W. N. Borle
Publikováno v:
IETE Journal of Research. 19:81-82
Dislocations produced in silicon crystal wafers are reported by simulating the conditions of high temperature processing during device manufacture. It is found that even if the starting wafer is free of dislocations, the various high temperature proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a457b9c95609c1f8beca19664121ff
https://doi.org/10.1080/03772063.1973.11487118
https://doi.org/10.1080/03772063.1973.11487118
Autor:
B. L. Sharma, W. N. Borle
Publikováno v:
Journal of The Electrochemical Society. 113:301
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc4f97211c3c4bc3d6ffbf7440f191ba
https://doi.org/10.1149/1.2423942
https://doi.org/10.1149/1.2423942
Publikováno v:
Journal of Scientific Instruments. 42:55-55
The quartz container used by Satterthwaite and Ure for making Bi2Te3 and its solid solutions by the Bridgman method of crystal growing is modified by the incorporation of four tubes, thus giving four identical ingots. A single furnace is used, withou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::140d30a2ad4175efcc1a0fa2d2a0a329
https://doi.org/10.1088/0950-7671/42/1/427
https://doi.org/10.1088/0950-7671/42/1/427