Výsledky vyhledávání - "W. Mizubayashi"

Akademický článek

CVD Growth Technologies of Layered MX2 Materials for Real LSI Applications—Position and Growth Direction Control and Gas Source Synthesis

Autor: T. Irisawa, N. Okada, W. Mizubayashi, T. Mori, W.-H. Chang, K. Koga, A. Ando, K. Endo, S. Sasaki, T. Endo, Y. Miyata

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 6, Pp 1159-1163 (2018)

Position and growth direction control in chemical vapor deposition (CVD) of WS2 and SnS2 by using patterned Si/SiO2 substrates has been demonstrated. It was found that step edges effectively worked as crystal nuclei and lateral crystal growth from th

Externí odkaz: https://doaj.org/article/88dd6a6f706b487897c0a41b60b08c2b

Zobrazit plný text záznamu

Akademický článek

Exact control of junction position using epitaxial NiSi2 crystallization in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Autor: W. Mizubayashi, S. Migita, Y. Morita, H. Ota

Publikováno v: AIP Advances, Vol 2, Iss 3, Pp 032126-032126-5 (2012)

This paper reports the demonstration of exact control of the junction position in ultrathin silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) using epitaxial NiSi2 crystallization. In the ultrathin SOI (100) plan

Externí odkaz: https://doaj.org/article/a365fcf8f9f74d30b3c97c05170ef48e

Zobrazit plný text záznamu

CVD Growth Technologies of Layered MX2 Materials for Real LSI Applications—Position and Growth Direction Control and Gas Source Synthesis

Autor: K. Endo, Kazuhiro Koga, Takahiko Endo, Wen-Hsin Chang, T. Irisawa, Naoya Okada, S. Sasaki, W. Mizubayashi, Atsushi Ando, Takahiro Mori, Yasumitsu Miyata

Publikováno v: IEEE Journal of the Electron Devices Society. 6:1159-1163

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::399df8d79decdbdf11c8e674c222f50a
https://doi.org/10.1109/jeds.2018.2870893

Zobrazit plný text záznamu

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

(Invited) Charge Trapping Type SOI-FinFET Flash Memory

Autor: Hiromi Yamauchi, S. Migita, Yoshie Ishikawa, H. Ota, Takashi Matsukawa, M. Masahara, Toshihide Nabatame, Toyohiro Chikyow, Y. Morita, W. Mizubayashi, Kazuhiko Endo, Junichi Tsukada, Shin-ichi O'uchi, Yongxun Liu

Publikováno v: ECS Transactions. 61:263-280

Y. X. Liu, T. Matsukawa, K. Endo, S. O’uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, and M. Masahara National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca7d36a735a45448f5a8b1f3d3e1bef5
https://doi.org/10.1149/06102.0263ecst

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání