Zobrazeno 1 - 10
of 39
pro vyhledávání: '"W. Mehr"'
Autor:
Tracy W. Mehr-Muska
Resilience enables us not only to survive adversity, but to be transformed by it. This book offers simple and proven strategies to develop resilience that will be of enormous benefit to anyone who is yearning to feel more peaceful and prepared. Coast
Autor:
Dirk Wolansky, W. Mehr, Xenia Knigge, Andre Wolff, Christian Wenger, Udo Christian Kaletta, Eva-Maria Laux, Frank F. Bier, Ralph Hölzel, Mirko Fraschke, Philip Kulse
Publikováno v:
Scopus-Elsevier
Dielectrophoresis (DEP) is an established method for the spatial manipulation of microscopical particles. We demonstrate the temporal and permanent immobilization of polystyrene nanoparticles and protein molecules with sizes ranging from 4 nm to 500
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5dbc31553b8a396a48a657b87339b592
https://doi.org/10.5220/0004888101760180
https://doi.org/10.5220/0004888101760180
Publikováno v:
Microelectronic Engineering. 30:395-398
This article describes the fabrication of single crystal silicon field emission tip arrays. Each array consists of 2500 tips. We used 4 in. (100) oriented n type silicon wafers 0.008 – 0.020 Ωcm, Sb doped. The tips were formed using a RIE process.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57c3f0352cef5c83dc6538556b3e596b
https://doi.org/10.1016/0167-9317(95)00271-5
https://doi.org/10.1016/0167-9317(95)00271-5
Autor:
G. Lupina, Anderson D. Smith, Christoph Henkel, Gunther Lippert, Sam Vaziri, J. Dabrowski, Mikael Östling, W. Mehr, Max C. Lemme
Publikováno v:
ESSDERC
In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for microelectronics integration: bottom gates with ultra-thin (2nm) high-quality thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62e3016f881e196fb6026940c5410cd9
https://doi.org/10.1109/essderc.2012.6343380
https://doi.org/10.1109/essderc.2012.6343380
Autor:
Hermann G. Grimmeiss, H.P. Zeindl, P. Schley, H. Frankenfeld, Klaus Schmalz, I.N. Yassievich, H. J. Osten, W. Mehr, Holger Rucker
Publikováno v:
Physical Review B. 50:14287-14301
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba4dd5eede82823a5ee85f66b1a23ae3
https://doi.org/10.1103/physrevb.50.14287
https://doi.org/10.1103/physrevb.50.14287
Autor:
H. J. Osten, H. Rücker, I.N. Yassievich, K. Schmalz, B. Dietrich, P. Schley, H. Frankenfeld, H.G. Grimmeiss, W. Mehr
Publikováno v:
Solid-State Electronics. 37:945-948
Results are presented concerning direct comparison of admittance spectroscopy and DLTS on p -Si/Si 1− x Ge x /Si quantum well (QW) structures with x = 0.17 using n + p mesa diodes with buried QW layer. The temperature dependence of potential barrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a22c9826d8af2c52e66fc96e74e3e1e9
https://doi.org/10.1016/0038-1101(94)90332-8
https://doi.org/10.1016/0038-1101(94)90332-8
Autor:
H. Rücker, K. Schmalz, Hermann G. Grimmeiss, P. Schley, H. Frankenfeld, B. Dietrich, W. Mehr, H. J. Osten
Publikováno v:
Solid State Phenomena. :595-600
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dfa625c96ec041bc8ad6538379d8677
https://doi.org/10.4028/www.scientific.net/ssp.32-33.595
https://doi.org/10.4028/www.scientific.net/ssp.32-33.595
Publikováno v:
Radiation Physics and Chemistry. 42:993-996
Fast electrons emitted by a beta radiation source produce ion pairs between a two eletrode arrangement full with argon or nitrogen at ambient pressure. Ions created there were identified with the help of an ion mobility spectrometer. The production o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31804c139eea2eafa81879848324bda3
https://doi.org/10.1016/0969-806x(93)90419-u
https://doi.org/10.1016/0969-806x(93)90419-u
Publikováno v:
SPIE Proceedings.
We present a new multilayer anti-reflective coating (ARC) optimization method. We have developed a software which allows the optimization of ARC consisting of up to 20 layers on any substrate with incident light integration over the aperture of litho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b3e72f79cb4000ceeeed972cde32696
https://doi.org/10.1117/12.637323
https://doi.org/10.1117/12.637323
Autor:
H. Frankenfeld, Hermann G. Grimmeiss, W. Mehr, I.N. Yassievich, H. J. Osten, K. Schmalz, P. Schley, H. Rücker, I. Babanskaya
Publikováno v:
MRS Proceedings. 326
A direct comparison of admittance spectroscopy and DLTS on p-type Si/Si 1-x Ge x /Si quantum wells with x = 0.17 was performed using n + p mesa diodes. The temperature dependence of potential barriers at the QW and of the Fermi level determines the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58e148bd93c7bd1286ffd98c0bf2e80d
https://doi.org/10.1557/proc-326-389
https://doi.org/10.1557/proc-326-389