Zobrazeno 1 - 10
of 21
pro vyhledávání: '"W. Marsetz"'
Autor:
Axel Hulsmann, W. Marsetz, Wolfgang Bronner, T. Fink, Michael Schlechtweg, S. Fischer, Klaus Köhler, T. Kleindienst, M. Demmler
Publikováno v:
27th European Microwave Conference and Exhibition.
Autor:
Hermann Massler, M. Demmler, L. Verweyen, Michael Schlechtweg, R. Osorio, Manfred Berroth, M. Neumann, W. Marsetz
Publikováno v:
1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).
We present an analytical charge conservative large signal model for MODFETs, which is valid up to MM-wave frequencies. Although the model equations are simple, an excellent accuracy in the representation of the nonlinear elements of the FET is achiev
Autor:
F. Steinhagen, W.H. Haydl, T. Krems, W. Marsetz, R. Locher, C. Wild, P. Koidl, A. HuIsmann, T.v. Kerssenbrock, P. Heide
Publikováno v:
1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).
The properties of coplanar transmission lines (CPWs) and -filters on polycrystalline diamond substrates are investigated over the frequency range from 1-120 GHz. Experimental results obtained for different geometries are in good agreement with theore
Autor:
S. Kudszus, A. Bessemoulin, W.H. Haydl, Axel Tessmann, W. Marsetz, Michael Schlechtweg, A. Hulsmamn
Publikováno v:
2000 30th European Microwave Conference.
Despite the advantages of coplanar waveguide technology for high performance and low cost MMIC applications, its possibilities are still not thoroughly exploited for commercial applications. This paper presents an overview of trends and latest achiev
By performing biased accelerated life tests and three dimensional temperature simulations the effect of drain voltage on reliability and channel temperature of pseudomorphic InAlAs/InGaAs HEMTs for low noise applications was investigated. At V d =1 V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea3fb34114dda924eff9c36c88ae3d00
https://publica.fraunhofer.de/handle/publica/196922
https://publica.fraunhofer.de/handle/publica/196922
Autor:
H. Kawashima, M. Dammann, B. Matthes, Michael Schlechtweg, Axel Hulsmann, W. Marsetz, J. Rudiger
Publikováno v:
28th European Microwave Conference, 1998.
The influence of device layout and packaging on transistor temperature was investigated. The operating temperatures of GaAs power PHEMTs were measured with integrated temperature sensors from 20 - 200°C with an accuracy of a few degrees. The measure
Autor:
Yves Baeyens, R. Osorio, Axel Hulsmann, W. Marsetz, M. Demmler, M. Neumann, Michael Schlechtweg, Hermann Massler
Publikováno v:
1998 28th European Microwave Conference.
By using a coplanar layout, incorporating transmission lines loaded with lumped shunt MIM-capacitors, the size of millimeter-wave power amplifiers can be considerably reduced. This is demonstrated by the design of two compact GaAs PHEMT power amplifi
Autor:
Hermann Massler, Enrique Sánchez, Axel Hulsmann, M. Demmler, L. Verweyen, M. Neumann, M. Fernandez Barciela, Y. Campos Roca, W.H. Haydl, W. Marsetz, Michael Schlechtweg, M. C. Curras Francos
Publikováno v:
1998 28th European Microwave Conference.
This paper presents the design and performance of a single-ended and a balanced MMIC frequency doublers from 38 to 76 GHz, realized in CPW technology using 0.15-?m PM-HEMTs on GaAs. These circuits have demonstrated an output power of nearly 10 dBm fo
High Performance Double Recessed Al0,2Ga0,8As/In0,25Ga0,75As PHEMTs for Microwave Power Applications
Autor:
Axel Hulsmann, W. Marsetz, T. Fink, Klaus Köhler, Wolfgang Bronner, Michael Schlechtweg, M. Demmler, T. Kleindienst, S. Fischer
Publikováno v:
1997 27th European Microwave Conference.
Double recessed T-gate Al0.2Ga0.8As/In0.25Ga0.75As pseudomorphic HEMTs with 0.3 ?m gate length and different upper recess widths have been processed and analyzed. Systematic investigations concerning the correlation between drain ledge, breakdown vol
Publikováno v:
IEE Tutorial Colloquium on Design of RFICs and MMICs.
Compact integrated circuits for millimetre-wave frequencies can be realised by using coplanar waveguide technology and single- or dual-gate HEMTs, allowing a simplified chip processing and a smaller chip size. Due to the resulting cost reduction, thi