Zobrazeno 1 - 10
of 174
pro vyhledávání: '"W. Maly"'
Autor:
Brady Benware, W. Maly, R.D. Blanton, C. Schuermyer, T. Zanon, J.E. Nelson, J.G. Brown, O. Poku
Publikováno v:
IEEE Design & Test of Computers. 23:390-400
Defect density and size distributions (DDSDs) are important parameters for characterizing spot defects in a process. This article addresses random spot defects, which affect all processes and currently require a heavy silicon investment to characteri
Autor:
R.E. Bryant, Kurt Keutzer, W. Maly, Jan M. Rabaey, Larry Pileggi, Kwang-Ting Cheng, Richard Newton, Alberto Sangiovanni-Vincentelli, Andrew B. Kahng
Publikováno v:
Proceedings of the IEEE. 89:341-365
As manufacturing technology moves toward fundamental limits of silicon CMOS processing, the ability to reap the full potential of available transistors and interconnect is increasingly important. Design technology (DT) is concerned with the automated
Publikováno v:
DAC
Advancements in IC manufacturing technologies allow for building very large devices with billions of transistors and with complex interactions between them encapsulated in a huge number of design rules. To ease designers' efforts in dealing with elec
Publikováno v:
DATE
Defect density and defect size distributions (DDSDs) are key parameters used in IC yield loss predictions. Traditionally, memories and specialized test structures have been used to estimate these distributions. In this paper, we propose a strategy to
Autor:
T. Vogels, T. Zanon, R. Desineni, R.D. Blanton, W. Maly, J.G. Brown, J.E. Nelson, Y. Fei, X. Huang, P. Gopalakrishnan, M. Mishra, V. Rovner, S. Tiwary
Publikováno v:
2004 International Conferce on Test.
Publikováno v:
ASP-DAC 2004: Asia and South Pacific Design Automation Conference 2004 (IEEE Cat. No.04EX753).
Publikováno v:
International Symposium for Testing and Failure Analysis.
SRAM bit fail maps (BFM) are routinely collected during earlier phases of yield ramping, providing a rich source of information for IC failure and deformation learning. In this paper, we present an automated approach to analyzing BFM data efficiently
Publikováno v:
1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395).
Until the plasma induced damage phenomenon is well understood and can be eliminated completely by optimizing process parameters, the risk of yield and reliability excursions must still be reduced by charging-robust product design. However, design sol
Publikováno v:
Proceedings EURO-DAC '92: European Design Automation Conference.
Publikováno v:
Proceedings of International Conference on Computer Aided Design.