Zobrazeno 1 - 10
of 30
pro vyhledávání: '"W. M. Duncan"'
Autor:
W. M. Duncan
Publikováno v:
SPIE Proceedings.
In this research we study Raman and fluorescence spectroscopies as non-destructive and noninvasive methods for probing biological material and “living systems.” Particularly for a living material any probe need be non-destructive and non-invasive
Autor:
W. M. Duncan, C. J. Maxwell
Publikováno v:
SPIE Proceedings.
Visible and Near Infrared (NIR) spectroscopy finds use in a number of applications including security, biomedicine, military, materials science, and materials processing areas to name a few. Visible red and NIR ranges are particularly valuable for in
Publikováno v:
Scopus-Elsevier
We report Raman studies of the Si–Si phonon band in Si1−xGex alloys, where the excitation is by visible and ultraviolet (351 nm) light. At a wavelength 351 nm, the optical penetration depth is extremely shallow (≈5 nm). By varying the excitatio
Publikováno v:
Journal of Applied Physics. 85:7224-7230
Raman spectroscopy is used to study GaAs heavily doped with carbon. Hole concentrations in these samples range from 2.3×1019 to 1×1020 cm−3. Three main Raman features are investigated: the longitudinal-optic (LO) phonon mode, the substitutional c
Publikováno v:
SIL Proceedings, 1922-2010. 26:2353-2357
(1998). The use of a Remotely Operated Vehicle (ROV) for surveying submerged aquatic plant communities in standing waters. SIL Proceedings, 1922-2010: Vol. 26, No. 5, pp. 2353-2357.
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:216-222
Spectral ellipsometry has been applied to in situ diagnostics of Hg1−xCdxTe molecular beam epitaxial growth. Spectral ellipsometry provides surface, composition, and film thickness properties of thin film electronic materials in real-time during gr
Autor:
S. P. Tobin, J. P. Tower, P. W. Norton, D. Chandler-Horowitz, P. M. Amirtharaj, V. C. Lopes, W. M. Duncan, A. J. Syllaios, C. K. Ard, N. C. Giles, Jaesun Lee, R. Balasubramanian, A. B. Bollong, T. W. Steiner, M. L. W. Thewalt, D. K. Bowen, B. K. Tanner
Publikováno v:
Journal of Electronic Materials. 24:697-705
We report an overview and a comparison of nondestructive optical techniques for determining alloy composition x in Cd1-xZnxTe substrates for HgCdTe epitaxy. The methods for single-point measurements include a new x-ray diffraction technique for preci
Autor:
Yung-Chung Kao, Chenjing Lucille Fernando, R. J. Aggarwal, J. W. Sleight, H. L. Tsai, W. M. Duncan, Mark A. Reed, William R. Frensley
Publikováno v:
Physical Review B. 51:10701-10708
Publikováno v:
Applied Physics Letters. 59:1440-1442
The two main problems, carbon contamination and a low growth rate, facing atomic layer epitaxy (ALE) of GaAs are addressed. A reactor was designed to process 2 in. wafers with a growth rate as high as 0.6 μm/h. Background carbon concentration less t
Publikováno v:
Applied Physics Letters. 57:1631-1633
We have applied micro‐Raman spectroscopy to the analysis of structural quality of GaAs‐on‐Si where the GaAs growth was performed through openings in an amorphous mask. The presence of the symmetry forbidden transverse optic (TO) phonon band and