Zobrazeno 1 - 10
of 684
pro vyhledávání: '"W. M. Duncan"'
Autor:
Maier, Maximilian1,2 (AUTHOR), Böhm, Thomas1 (AUTHOR) t.boehm@fz-juelich.de
Publikováno v:
Small Science. Sep2024, Vol. 4 Issue 9, p1-14. 14p.
Autor:
W. M. Duncan
Publikováno v:
SPIE Proceedings.
In this research we study Raman and fluorescence spectroscopies as non-destructive and noninvasive methods for probing biological material and “living systems.” Particularly for a living material any probe need be non-destructive and non-invasive
Autor:
W. M. Duncan, C. J. Maxwell
Publikováno v:
SPIE Proceedings.
Visible and Near Infrared (NIR) spectroscopy finds use in a number of applications including security, biomedicine, military, materials science, and materials processing areas to name a few. Visible red and NIR ranges are particularly valuable for in
Publikováno v:
Scopus-Elsevier
We report Raman studies of the Si–Si phonon band in Si1−xGex alloys, where the excitation is by visible and ultraviolet (351 nm) light. At a wavelength 351 nm, the optical penetration depth is extremely shallow (≈5 nm). By varying the excitatio
Publikováno v:
Journal of Applied Physics. 85:7224-7230
Raman spectroscopy is used to study GaAs heavily doped with carbon. Hole concentrations in these samples range from 2.3×1019 to 1×1020 cm−3. Three main Raman features are investigated: the longitudinal-optic (LO) phonon mode, the substitutional c
Publikováno v:
SIL Proceedings, 1922-2010. 26:2353-2357
(1998). The use of a Remotely Operated Vehicle (ROV) for surveying submerged aquatic plant communities in standing waters. SIL Proceedings, 1922-2010: Vol. 26, No. 5, pp. 2353-2357.
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:216-222
Spectral ellipsometry has been applied to in situ diagnostics of Hg1−xCdxTe molecular beam epitaxial growth. Spectral ellipsometry provides surface, composition, and film thickness properties of thin film electronic materials in real-time during gr
Autor:
S. P. Tobin, J. P. Tower, P. W. Norton, D. Chandler-Horowitz, P. M. Amirtharaj, V. C. Lopes, W. M. Duncan, A. J. Syllaios, C. K. Ard, N. C. Giles, Jaesun Lee, R. Balasubramanian, A. B. Bollong, T. W. Steiner, M. L. W. Thewalt, D. K. Bowen, B. K. Tanner
Publikováno v:
Journal of Electronic Materials. 24:697-705
We report an overview and a comparison of nondestructive optical techniques for determining alloy composition x in Cd1-xZnxTe substrates for HgCdTe epitaxy. The methods for single-point measurements include a new x-ray diffraction technique for preci
Autor:
Yung-Chung Kao, Chenjing Lucille Fernando, R. J. Aggarwal, J. W. Sleight, H. L. Tsai, W. M. Duncan, Mark A. Reed, William R. Frensley
Publikováno v:
Physical Review B. 51:10701-10708
Publikováno v:
Applied Physics Letters. 59:1440-1442
The two main problems, carbon contamination and a low growth rate, facing atomic layer epitaxy (ALE) of GaAs are addressed. A reactor was designed to process 2 in. wafers with a growth rate as high as 0.6 μm/h. Background carbon concentration less t