Zobrazeno 1 - 10
of 13
pro vyhledávání: '"W. M. Arnold Bik"'
Autor:
W M Arnold Bik, F H P M Habraken
Publikováno v:
Reports on Progress in Physics. 56:859-902
In elastic recoil detection (ERD) one determines the yield and energy of particles ejected out of the surface region of samples under MeV ion bombardment. By application of this surface and thin film analysis technique one can obtain quantitative inf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::591a1c6a3ff33e2a1fa272327725b1ab
https://doi.org/10.1088/0034-4885/56/7/002
https://doi.org/10.1088/0034-4885/56/7/002
Autor:
J. Bezemer, A. J. M. Berntsen, W. Grevendonk, W. M. Arnold Bik, W.G.J.H.M. van Sark, R.A.C.M.M. van Swaaij, H. Herremans
Publikováno v:
Philosophical Magazine B. 66:787-800
Steady-state optical modulation spectroscopy (OMS) measurements have been carried out on well characterized hydrogenated amorphous silicon-carbon alloy layers. A series of samples with methane-to-silane gas flow ratios varying from 0.1 to 0.7 was dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b5e8d2dbea161248a46b9a83df33033
https://doi.org/10.1080/13642819208220128
https://doi.org/10.1080/13642819208220128
Publikováno v:
Journal of Non-Crystalline Solids. :29-32
We have used elastic-recoil detection (ERD) with 10 MeV 28 Si ions and buried layers of deuterium-rich material to measure diffusion coefficients of deuterium in undoped PECVD a-Si:H samples deposited at temperatures between 50 and 250 o C. The resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2666e1fc0f46bfc00180600cad940744
https://doi.org/10.1016/s0022-3093(05)80049-3
https://doi.org/10.1016/s0022-3093(05)80049-3
Publikováno v:
Applied Physics Letters. 59:1687-1689
Doppler S‐parameter measurements have been performed on low‐pressure chemical vapor deposited (LPCVD) Si3N4 samples. Annealing of the samples at 1000 °C for times up to 1 h resulted in a decrease of both the S parameter and the positron diffusio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fa3df414734975d4b60f9ed712a3520
https://doi.org/10.1063/1.106218
https://doi.org/10.1063/1.106218
Publikováno v:
Applied Physics Letters. 56:2530-2532
Hydrogen transport in low‐pressure chemical vapor deposited Si3N4 has been investigated using samples consisting of a double layer of hydrogenated and deuterated nitride films. Concentration depth profiles of hydrogen and deuterium were measured us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::211e5b12d91f44b5658422715c301485
https://doi.org/10.1063/1.103261
https://doi.org/10.1063/1.103261
Autor:
M. J. van den Boogaard, A. van Veen, A. C. Van Der Steege, W. M. Arnold Bik, Y. Chen, D. L. Williamson, W. F. van der Weg, S.J. Jones, Rudi A. Hakvoort, W.G.J.H.M. van Sark
Publikováno v:
MRS Proceedings. 258
We have used small-angle X-ray scattering (SAXS) and Doppler-broadening measurements of positron-annihilation radiation to study changes in the microvoid distribution in PECVD a-Si:H films during annealing. From a comparison of data on deuterium diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59c655c5dfeba2abdaedb8de71a48434
https://doi.org/10.1557/proc-258-407
https://doi.org/10.1557/proc-258-407
Publikováno v:
MRS Proceedings. 284
In the PECVD SixNyHzOw the hydrogen is principally incorporated as N-H bonds. For O/(O+N) below 0.4, the %H is constant at 25%; from 0.4 to 1, it decreases to 4%. We show that a chemical ordered model is likely to describe the hydrogen incorporation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5d25fac00de03748310a609e28ff3b1
https://doi.org/10.1557/proc-284-363
https://doi.org/10.1557/proc-284-363
Autor:
W. M. Arnold Bik, J. B. Oude Elferink, R.F. De Keersmaecker, W. F. van der Weg, A. E. T. Kuiper, Herman Maes, F.H.P.M. Habraken, M.M. Heyns, J. Remmerie
Publikováno v:
LPCVD Silicon Nitride and Oxynitride Films ISBN: 9783540539544
LPCVD Silicon Nitride and Oxynitride Films
LPCVD Silicon Nitride and Oxynitride Films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4fa106c505e02b68f25799d761b3c55
https://doi.org/10.1007/978-3-642-76593-3_1
https://doi.org/10.1007/978-3-642-76593-3_1
Publikováno v:
Vacuum. 41:1055-1056
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::829216d1288c25f3b5a7f08572cfd3c0
https://doi.org/10.1016/0042-207x(90)93860-l
https://doi.org/10.1016/0042-207x(90)93860-l
Autor:
F.H.P.M. Habraken, W. M. Arnold Bik, W. F. van der Weg, U.A. van der Heide, J. B. Oude Elferink
Publikováno v:
Applied Surface Science, 30(1-4), 197. Elsevier
Silicon oxynitride films with five different O/N ratios were deposited with low pressure chemical vapor deposition on a silicon substrate covered with an oxide. The films were subjected to subsequent post-deposition anneals in N2 and H2 at 1000°C, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6960e9c6a230512f600a4314d8f65fa
https://doi.org/10.1016/0169-4332(87)90093-6
https://doi.org/10.1016/0169-4332(87)90093-6