Zobrazeno 1 - 10
of 393
pro vyhledávání: '"W. Mönch"'
Autor:
W. Mönch
Publikováno v:
Applied Physics A. 87:359-366
The intrinsic interface-induced gap states are the fundamental theoretical concept which explains the band-structure lineup at all semiconductor interfaces. However, a comparison of experimental results and theoretical predictions requires data of we
Publikováno v:
Endoskopie heute. 26:59-61
In dem vorliegenden Fall berichten wir uber eine Patientin, die 1998 cholezystektomiert wurde und seitdem rezidivierend Cholangitiden hatte und mehrfach ERCPiert worden ist. Wir stellen nun die Diagnose eines tief mundenden, prominenten Zystikusstump
Publikováno v:
Microelectronic Engineering. 88:2349-2351
A concept of non-mechanical optical apertures with variable spatial transmission is presented. It is based on electrochromic materials which are capable of changing their transmission when an electrochemical potential is applied. In our case an intri
Publikováno v:
Mineralogy and Petrology. 70:235-256
Systematic changes in REE patterns of fluorites with various colourations from the Ehrenfriedersdorf tin deposit, Germany, can be related to the evolution of the mineral forming hydrothermal fluid within the endo- and exocontact of a related Li-F gra
Autor:
W. Mönch, L. Von Wolfersdorf
Publikováno v:
ZAMM. 80:457-471
Es wird ein mathematisches Modell fur die ebene Potentialstromung einer reibungslosen inkompressiblen Flussigkeit um und durch einen Kreiszylinder aus porosem Material angegeben, wobei die Stromung innerhalb des Zylinders dem Darcyschen Gesetz unterl
Publikováno v:
Surface Science. :498-503
The vibrational properties of clean, H- and D-covered GaN{0001} surfaces as well as electronic excitations were investigated by high-resolution electron energy-loss spectroscopy. Surface cleanliness and structure were monitored by Auger electron spec
Publikováno v:
Journal of Physics: Condensed Matter. 11:8489-8494
The adsorption of Cs on Si(111)-7 × 7 surfaces at 170 K was studied by x-ray photoelectron spectroscopy. The growth mode was determined as layer-by-layer growth. Si(2p) core-level spectra show an initial shift to higher binding energies of 70 meV fo
Autor:
R.F. Schmitsdorf, W. Mönch
Publikováno v:
The European Physical Journal B. 7:457-466
Unreconstructed \(\) interfaces may be prepared by evaporation of thick Pb films onto \(\) surfaces at room temperature. Current-voltage and capacitance-voltage characteristics of such \(\) Schottky contacts were measured in the temperature range bet
Publikováno v:
Journal of Physics: Condensed Matter. 11:L111-L118
The growth of fullerene films on surfaces and the formation of the interface was studied using low-energy electron diffraction, Auger electron spectroscopy and x-ray as well as ultraviolet photoemission spectroscopy. The initial growth of proceeds la
Publikováno v:
The European Physical Journal B. 7:1-4
Clean, ordered, and stoichiometric GaN\(\) surfaces are obtained after exposure to a Ga-flux followed by annealing in ultrahigh vacuum (UHV), after desorption of a Ga layer deposited at room-temperature or after nitrogen ion-bombardment and annealing