Zobrazeno 1 - 10
of 77
pro vyhledávání: '"W. Lukaszek"'
Publikováno v:
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Preliminary studies of radiation damage and recovery of E2PROM sensor devices following exposure to a high-dose, 1 MeV proton beam give encouragement to the use of H-cut and layer transfer methods for vertical integration of 3D-IC's with fully-formed
Autor:
W. Lukaszek
Publikováno v:
IEEE Transactions on Electronics Packaging Manufacturing. 24:72-77
Significant know-how and understanding of device charging damage in processing equipment exists in complementary metal oxide semiconductor (CMOS) integrated circuit (IC) manufacturing. This paper introduces the basic charging mechanisms responsible f
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:48-51
The mechanism responsible for charging damage to integrated circuit device insulators is treated as a plasma phenomenon, in which the beam/plasma drives potential differences on the process surface. J−V data obtained with the CHARM2 diagnostic in a
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74:301-305
A second generation wafer surface potential monitor (CHARM2) employing floating gate EEPROM transistors as sensing/ memory elements is described, and applied to the study of charging behavior of bare and patterned-resist-covered wafers during high-cu
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 6:306-317
An approach to computer-aided interpretation of parametric test data for integrated circuit process-problem diagnosis is presented. In contrast to a conventional expert system, which reasons with a knowledge base consisting of rules acquired from hum
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:143-147
A novel, EEPROM transistor-based wafer surface-charge monitor has been applied to quantitative assessment of surface charging during 120 kV, 5 × 1015 arsenic ion implants under a variety of beam-current, flood-gun and argon pressure conditions. Leas
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 3:158-167
The expected defect modes, and the predominance of a single mode, for wafer-scale interconnections produced using typical thin-film processing techniques are discussed. A process using redundancy in the vertical direction to eliminate the dominant de
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 3:18-27
The authors describe a design approach for, and experimental results obtained from, a test chip developed for the purpose of automated diagnosis of random-defect-dominated yield problems of CMOS ICs. Unlike test chips comprised of ad hoc collections
Autor:
W. Dixon, W. Lukaszek
Publikováno v:
International Integrated Reliability Workshop Final Report.
Publikováno v:
Proceedings of 1st International Symposium on Plasma Process-Induced Damage.
A unified view of wafer charging effects during ion implantation has been developed based on (1) measurements of plasma current-voltage (J-V) characteristics with wafer-based, EEPROM sensors and (2) a viable model which describes the main features of