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pro vyhledávání: '"W. Langheinrich"'
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Autor:
W. Petry, J. H. Werner, T. Stroh, S. Großmann, S. Mantel, N. Straumann, F. Hrebabetzky, W. Langheinrich, K. Heinloth
Publikováno v:
Physik Journal. 52:583-586
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9569e77137506f37d947281150e2c1c6
https://doi.org/10.1002/phbl.19960520616
https://doi.org/10.1002/phbl.19960520616
Autor:
T. Kern, Robert Strenz, J. Hsiao, C. T. Hsieh, Y. T. Lin, G. Tempel, R. Duschl, A. Gratz, E. Suryaputra, K. Ho, A. Iserhagen, J.R. Power, C. Bukethal, V. Pissors, M. Rohrich, H. H. Kuo, C. M. Huang, C. H. Tan, R. Ullmann, W. Dickenscheid, D. Shum, L. C. Tran, S. Paprotta, W. Langheinrich, E. O. Andersen, C. W. Hung, C. W. Ho
Publikováno v:
2012 4th IEEE International Memory Workshop.
A split-gate (SG) flash memory cell has been embedded in a 65nm ground-rule high performance (HP) CMOS logic process with copper low K interconnects. A gate spacer processing sequence self-aligned (SA) process provides a reliability-robust cell and h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::734c50ad55a021879dbd448ae980777e
https://doi.org/10.1109/imw.2012.6213670
https://doi.org/10.1109/imw.2012.6213670
Publikováno v:
Microelectronic Engineering. 21:479-482
We have developed a three-level-based PMMA/Ti/Pt resist system for the fabrication of high Tc superconducting structures with lateral dimensions in the 100nm region. The degradation of superconductivity after substractive sub-μ patterning of high Tc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f45939d995a57e52abb81433e8a092d2
https://doi.org/10.1016/0167-9317(93)90115-l
https://doi.org/10.1016/0167-9317(93)90115-l
Publikováno v:
Physical Review Letters. 70:841-844
Conductance fluctuations and weak localization in ultrasmall gold bridges with all dimensions smaller than the elastic mean free path have been studied as a function of magnetic field and applied bias voltage. In addition to the well known Thouless e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b29ceedb8fcf4158d7dd7f5fd43b1771
https://doi.org/10.1103/physrevlett.70.841
https://doi.org/10.1103/physrevlett.70.841
Publikováno v:
Sensors and Actuators A: Physical. 32:419-422
Polysilicon layers for application in temperature sensors have been investigated. Hence the characteristics of polysilicon resistors as a function of process parameter variation have been studied. Continuing our previous work, the effect of annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e39d8066ad25512365ea14b67f71c8ec
https://doi.org/10.1016/0924-4247(92)80023-v
https://doi.org/10.1016/0924-4247(92)80023-v
Publikováno v:
Microelectronic Engineering. 17:287-290
As a new high resolution electron beam resist, homogeneous and fine-crystalline lithium fluoride films were fabricated. For this purpose, a special evaporation process was developed. The advantage of lithium fluoride is the relatively low critical ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::081c64abadc219ecc428a245d9115829
https://doi.org/10.1016/0167-9317(92)90058-y
https://doi.org/10.1016/0167-9317(92)90058-y
Publikováno v:
Sensors and Actuators A: Physical. 27:647-651
Continuing our preceding work, three different technological aspects of the use of polysilicon for temperature sensor applications have been studied. First, the reproducibility of the polysilicon process itself has been investigated. Hence a statisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c5af8447dab9fa38f7b83b1874aedd0
https://doi.org/10.1016/0924-4247(91)87065-b
https://doi.org/10.1016/0924-4247(91)87065-b
Publikováno v:
Sensors and Actuators A: Physical. 23:1015-1018
The temperature coefficient (TC) of polysilicon resistivity depends on the concentration of the incorporated dopant. Thus it is possible to realize resistors with positive, negative or zero TC. The use of a parallel resistor is a simple method to lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afd3c6febc1edc4f617c6544d08b2ae1
https://doi.org/10.1016/0924-4247(90)87080-3
https://doi.org/10.1016/0924-4247(90)87080-3
Autor:
K. van der Zanden, E.-O. Andersen, D. Shum, G. Tempel, W. Langheinrich, R. Allinger, R. Kakoschke, L. Pescini, Robert Strenz, J.R. Power, Y. Gong
Publikováno v:
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop.
We report Flash cell write/erase and reliability data from a 2Mb demonstrator processed using a 0.13 mum based eFlash technology comprising the high-k material, aluminum oxide (Al2O3) within the inter-poly dielectric (IPD) layer. With bottom and top-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55119629c3cfa088996776219afad3cd
https://doi.org/10.1109/nvsmw.2007.4290567
https://doi.org/10.1109/nvsmw.2007.4290567