Výsledky vyhledávání - "W. L. Warren"

Autor: W. L. Warren

Publikováno v: Peritia. 13:276-291

An examination of the ecclesiastical policy of the first Angevin kings in Ireland suggests that the period 1171-1216 constitutes a distinct phase in Irish history characterised by a desire on the part of Henry II and king John to pursue a policy of p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b5192c76ceda3576be7b8406f34042f6
https://doi.org/10.1484/j.peri.3.370

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Is Decreased Blood Plasma Concentration of the Complement C4B Protein Associated with Attention-Deficit Hyperactivity Disorder?

Autor: Roger A. Burger, Alma Maciulis, Reed P. Warren, Anthony R. Torres, W L Warren, J D Odell

Publikováno v: Journal of the American Academy of Child & Adolescent Psychiatry. 34:1009-1014

Objective The complement system is a group of blood proteins that play an important role in defending against viral and bacterial infections. The objective of this investigation was to study the plasma levels of the C4B protein in attention-deficit h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4d4a2b931391e850baf479d25560cfb
https://doi.org/10.1097/00004583-199508000-00010

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Increased Frequency of the Extended or Ancestral Haplotype B44-SC3O-DR4 in Autism

Autor: Alma Maciulis, Anthony R. Torres, Roger A. Burger, W L Warren, J D Odell, W W Daniels, Reed P. Warren

Publikováno v: Neuropsychobiology. 32:120-123

Autism likely results from several different etiologies or a combination of pathological mechanisms. Recent studies suggest that this disorder may be associated with immune abnormalities, pathogen-autoimmune processes and perhaps the major histocompa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a12971c4e39b5605f44cc75a33a8ba2c
https://doi.org/10.1159/000119223

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ChemInform Abstract: Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films. Part 2. a-SiNx:H

Autor: W. L. WARREN, J. KANICKI, F. C. RONG, E. H. POINDEXTER

Publikováno v: ChemInform. 23

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::78aff19917255ec06f5017de88747b5e
https://doi.org/10.1002/chin.199222259

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ChemInform Abstract: Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films. Part 1. a-SiO2

Autor: W. L. Warren, M. Offenberg, E. H. Poindexter, W. Mueller‐Warmuth

Publikováno v: ChemInform. 23

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c29b32e6c7e1e9e2df8dcd6d67fb88d
https://doi.org/10.1002/chin.199221312

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ChemInform Abstract: Paramagnetic Point Defects in Amorphous Thin Films of SiO2 and Si3N4: Updates and Additions

Autor: Edward H. Poindexter, W. L. Warren

Publikováno v: ChemInform. 26

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b68b5e6b63e8b36ff8203e837835a47
https://doi.org/10.1002/chin.199547309

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Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: II

Autor: M. Offenberg, W. Müller‐Warmuth, W. L. Warren, E. H. Poindexter

Publikováno v: Journal of The Electrochemical Society. 139:880-889

In this paper the authors review paramagnetic point defects in amorphous silicon nitride thin films. We will discuss two intrinsic paramagnetic defects: a trivalent silicon center, named the K-center, and the recently observed nitrogen dangling-bond

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9412ff080da4728acfe547b0aba3fcdf
https://doi.org/10.1149/1.2069319

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Deficiency of Suppressor-Inducer (Cd4+Cd45ra+) T Cells in Autism

Autor: L J Yonk, J D Odell, P. Cole, W L Warren, Roger A. Burger, Vijendra K. Singh, E. White, Reed P. Warren

Publikováno v: Immunological Investigations. 19:245-251

CD4+ cells are a heterogenous population of lymphocytes including at least two distinct subpopulations: CD45RA+ cells, inducers of suppressor T cells and CDw29+ cells, inducers of helper function for antibody production. To investigate the possibilit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::479207f1ecca99608e68b345e3943d26
https://doi.org/10.3109/08820139009041839

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Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors

Autor: R. A. B. Devine, W. L. Warren, J.-C. Rostaing, K. L. Vanheusdan, Jean-Luc Autran

Publikováno v: Applied Physics Letters. 70:2999-3001

Interfacial degradation induced by hot-electron injection has been studied in n-channel metal oxide semiconductor transistors with channel lengths down to 0.2 μm. The devices were annealed in either H2 or D2 containing atmospheres. The channel trans

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4f5bb058c2aa58c4d064241a4834421f
https://doi.org/10.1063/1.118769

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Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9

Autor: Chun-Wei Chen, John Robertson, W. L. Warren, C. D. Gutleben

Publikováno v: Applied Physics Letters. 69:1704-1706

The band structure of the layered perovskite SrBi2Ta2O9 (SBT) was calculated by tight binding and the valence band density of states was measured by x‐ray photoemission spectroscopy. We find both the valence and conduction band edges to consist of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::58ac9fec5946afadc2e4e3205be17144
https://doi.org/10.1063/1.118003

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