Zobrazeno 1 - 10
of 152
pro vyhledávání: '"W. KRIEGSEIS"'
Autor:
Bruno K. Meyer, Jürgen Janek, Dietmar Hasselkamp, W. Kriegseis, Boris Mogwitz, Angelika Polity, Ganhua Fu
Publikováno v:
Applied Physics A. 84:309-312
FeS polycrystalline films were prepared on float glass by radio-frequency reactive sputtering. X-ray diffraction, scanning electron microscopy, Rutherford backscattering, and secondary ion mass spectroscopy were used to characterize the films. The ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b98546e629ba03cdc0ad0b0010bab9aa
https://doi.org/10.1007/s00339-006-3624-y
https://doi.org/10.1007/s00339-006-3624-y
Autor:
Bruno K. Meyer, Angelika Polity, Jürgen Bläsing, Yunbin He, W. Kriegseis, Alois Krost, Christian Kisielowski
Publikováno v:
Thin Solid Films. :229-232
We demonstrate the deposition of CuInS 2 films on single-crystalline (0 0 0 1)-sapphire by radio frequency reactive sputtering with a Cu–In alloy target and H 2 S gas. X-ray diffraction (XRD) revealed that the as-sputtered films are of mainly (1 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b7088684064ec57563e99a07b5b8531
https://doi.org/10.1016/j.tsf.2003.10.100
https://doi.org/10.1016/j.tsf.2003.10.100
Autor:
D. Forster, Detlev M. Hofmann, Bruno K. Meyer, Axel Hoffmann, M. Straßburg, Anna V. Rodina, W. Kriegseis, H. Alves, Frank Bertram, Jürgen Christen, U. Haboeck, M. Dworzak
Publikováno v:
physica status solidi (b). 241:231-260
The optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements. At liquid helium temperature in undoped crystals the neutral donor bound e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66bd479be325a3cad8b6a65ecb443895
https://doi.org/10.1002/pssb.200301962
https://doi.org/10.1002/pssb.200301962
Autor:
Bruno K. Meyer, W. Kriegseis, Thorsten Krämer, Martin Hardt, Yunbin He, Angelika Polity, B. Szyszka
Publikováno v:
Journal of Physics and Chemistry of Solids. 64:2075-2079
As a preliminary step towards superstrate-type solar cells, we fabricated films of a CuInS 2 /ZnO:Al/float glass configuration. A layer of aluminum doped ZnO (ZnO:Al) with a thickness of 320–450 nm was first prepared on float glass at 200 °C by mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::514fcdb1548876c1a0460bac4a7c27da
https://doi.org/10.1016/s0022-3697(03)00207-5
https://doi.org/10.1016/s0022-3697(03)00207-5
Autor:
Thorsten Krämer, Martin Hardt, Bruno K. Meyer, Yunbin He, I. Österreicher, W. Kriegseis, Angelika Polity
Publikováno v:
International Journal of Modern Physics B. 16:4380-4386
CuInS 2 films were deposited on float glass substrates by a one-stage reactive RF sputter process using a Cu-In alloy target and H 2 S gas. The sputtered films generally have a (112) preferential orientation. X-ray reflectometry was used to measure t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5e8bc5495580a564986156b186a77ca
https://doi.org/10.1142/s0217979202015467
https://doi.org/10.1142/s0217979202015467
Autor:
Yunbin He, Jürgen Bläsing, W. Kriegseis, Thorsten Krämer, Martin Hardt, Bruno K. Meyer, Alois Krost, Angelika Polity, Dietmar Hasselkamp
Publikováno v:
Japanese Journal of Applied Physics. 41:4630-4634
Cu2S thin films were deposited on float glass substrates by radio frequency reactive sputtering. X-ray diffraction measurements, including grazing incidence geometry, showed that the sputtered Cu2S films had hexagonal structure with a strong (001) fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a54142ca7e1ff22cbb8be326ace1d351
https://doi.org/10.1143/jjap.41.4630
https://doi.org/10.1143/jjap.41.4630
Autor:
Bruno K. Meyer, W. Zhang, Jürgen Christen, Detlev M. Hofmann, D. Meister, Michael Heuken, H. Alves, T. Riemann, W. Kriegseis, Alois Krost
Publikováno v:
Journal of Crystal Growth. 234:616-622
High-temperature (HT) deposited buffer layer and flow modulation growth are applied as two modulated techniques to the growth of high-quality GaN films by hydride vapor phase epitaxy. The characterization results indicate that the use of HT buffer la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a76e474c5448f239fcca1263ae30d54
https://doi.org/10.1016/s0022-0248(01)01714-6
https://doi.org/10.1016/s0022-0248(01)01714-6
Autor:
Bruno K. Meyer, I. Österreicher, H.R Alves, D. Pfisterer, Yunbin He, W. Kriegseis, Martin Hardt, Angelika Polity
Publikováno v:
Thin Solid Films. :62-65
The ternary compound semiconductor CuInS 2 is one of the most attractive materials for high efficiency solar cells due to its bandgap of 1.55 eV which is well matched to the solar spectrum. We deposit CuInS 2 films on float glass substrates by a reac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee1d95d9e626195ee369224af6109935
https://doi.org/10.1016/s0040-6090(01)01533-4
https://doi.org/10.1016/s0040-6090(01)01533-4
Autor:
W. Niessner, W. Burkhardt, Bruno K. Meyer, D. Meister, T. Christmann, S Franke, D. Schalch, W. Kriegseis, A. Scharmann
Publikováno v:
Thin Solid Films. 402:226-231
Fluorine- and tungsten-doped vanadium dioxide (VO2) is a promising coating material for applications as energy-conserving windows. We prepared VO2 films simultaneously co-doped with fluorine and tungsten and report on the results of optical measureme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56b958010b4c0b3fe7a6708148923196
https://doi.org/10.1016/s0040-6090(01)01603-0
https://doi.org/10.1016/s0040-6090(01)01603-0
Investigation of structural defects of thick GaN grown by flow-modulated hydride vapor-phase epitaxy
Autor:
Wei Zhang, W. Kriegseis, D. Meister, H. Alves, Bruno K. Meyer, Peter Veit, Juergen Christen, T. Riemann, Detlev M. Hofmann, Michael Heuken
Publikováno v:
Physica B: Condensed Matter. :89-92
We investigated the structural defects in GaN grown by hydride vapor-phase epitaxy via flow-modulation growth technique. It is found that the structural defects decrease greatly from the initial layer (1010–12 cm−2) above substrate to the top lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12dcca342cb782244dbda31ff175f97c
https://doi.org/10.1016/s0921-4526(01)00667-6
https://doi.org/10.1016/s0921-4526(01)00667-6