Zobrazeno 1 - 10
of 16
pro vyhledávání: '"W. K. Simon"'
Publikováno v:
Ferroelectrics. 333:185-191
The effects of isotropic and anisotropic epitaxy on the nonlinear dielectric response in (Ba0.6,Sr0.4TiO3) thin films were investigated experimentally. Under isotropic epitaxy, it is shown that the misfit is detrimental to the non-linear response of
Autor:
Kamran Ghorbani, Anthony S. Holland, E.A. Fardin, W. K. Simon, Ahmad Safari, E. Koray Akdogan
Publikováno v:
2006 Asia-Pacific Microwave Conference.
This paper presents the microwave properties of barium strontium titanate (BST) thin films on r-plane sapphire substrates. A series of films with thickness 25 – 400 nm was prepared by pulsed laser deposition (PLD). Microwave properties of the films
Publikováno v:
2006 IEEE International Symposium on the Applications of Ferroelectrics.
Strain relaxation in (Ba 0.60 Sr 0.40 ) TiO 3 epitaxial films on ≪110≫-oriented NdGaO 3 substrates is investigated in the thickness range, h= 25-1200 nm. The BST films prepared by PLD show that residual strains mostly relax by h 200 nm, and for h
Publikováno v:
2006 IEEE International Symposium on the Applications of Ferroelectrics.
Nonlinear dielectric response of (Ba 0.60 Sr 0.40 )TiO 3 epitaxial films on ≪100≫ and ≪110≫-oriented NdGaO 3 substrates were investigated as a function of film thickness. The second, fourth and sixth order permittivities were determined at 10
Publikováno v:
2006 IEEE International Symposium on the Applications of Ferroelectrics.
Morphotropic phase boundary composition KNaNbO 3 -LiTaO 3 -LiSbO 3 (KNN-T-LS) thin films were grown by Pulsed Laser Deposition on niobium doped conductive SrTiO 3 substrates. Using X-ray diffractometry, the phase evolution, stoichiometry, and growth
Publikováno v:
14th IEEE International Symposium on Applications of Ferroelectrics, 2004. ISAF-04. 2004.
This work investigates the effects of anisotropic epitaxial strains on the microwave frequency dielectric response of BST (60/40) thin films. Dielectric properties such as permittivity and tunability along the , and crystallographic directions correl
Publikováno v:
14th IEEE International Symposium on Applications of Ferroelectrics, 2004. ISAF-04. 2004.
MicroPen/spl trade/ direct-write technique has been used to fabricate polycrystalline paraelectric BST 60/40 11-140 /spl mu/m thick films on alumina substrates. The dielectric properties of the thick films were studied as a function of film thickness
Publikováno v:
MRS Proceedings. 833
Ba0.60Sr0.40TiO3 thin films were deposited on orthorhombic oriented NdGaO3 substrates by pulsed-laser deposition. Film thickness ranged from 25 nm to 1200 nm. X-ray pole figures have shown consistent textured films with good alignement to the substra
Publikováno v:
MRS Proceedings. 784
Ba0.60Sr0.40TiO3 thin films were deposited on oriented NdGaO3 substrates by pulsed-laser deposition. Film thickness ranged from 20 nm to 800 nm. Microstructural features, as evaluated with AFM and FESEM, have exhibited high quality thickness dependen
Publikováno v:
Journal of Applied Physics. 101:024104
We investigate the nonlinear dielectric properties of 0.9Pb(Mg1∕3,Nb2∕3)O3∙0.1PbTiO3 (PMN-PT) and Ba[Ti0.85,Sn0.15]O3 (BTS) paraelectrics experimentally and theoretically. We measure the nonlinear dielectric response in the parallel plate capac