Zobrazeno 1 - 10
of 83
pro vyhledávání: '"W. K. Ge"'
Autor:
J. Lang, F. J. Xu, Y. H. Sun, N. Zhang, J. M. Wang, B. Y. Liu, L. B. Wang, N. Xie, X. Z. Fang, X. N. Kang, Z. X. Qin, X. L. Yang, X. Q. Wang, W. K. Ge, B. Shen
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 1, Pp 1-8 (2021)
Carrier velocity modulation by asymmetrical concave quantum barriers to improve the performance of AlGaN-based deep-ultraviolet light emitting diodes has been investigated. The concave structure is realized by inserting a low Al composition AlGaN lay
Externí odkaz:
https://doaj.org/article/b9c2f8fb4004422c8f36c6691197dd79
Autor:
Ricky K.Y. Fu, W. K. Ge, Yongfeng Mei, Paul K. Chu, Zhikai Tang, Z.M. Li, Chunlei Yang, W.Y. Cheung, S.P. Wong, Gg G. Siu
Publikováno v:
Surface and Coatings Technology. 201:8348-8351
Highly (1000) oriented ZnO films were successfully grown onto silicon substrates using a dual plasma deposition process incorporating a metal cathodic arc source and oxygen ambient. The optical properties of a series of ZnO films deposited on quartz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fddd123cf01aee3652af103a9caf47f0
https://doi.org/10.1016/j.surfcoat.2006.10.056
https://doi.org/10.1016/j.surfcoat.2006.10.056
Publikováno v:
physica status solidi (c). :2396-2399
Silicon dioxide passivated back-to-back Schottky diodes were fabricated by depositing Ni on rf plasma-assisted molecular beam epitaxy-grown GaN utilizing a unique double buffer layer structure. In this study, both low-frequency noise and deep-level t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::034641915da7ea01116cb08054959fdb
https://doi.org/10.1002/pssc.200303393
https://doi.org/10.1002/pssc.200303393
Publikováno v:
physica status solidi (b). 235:401-406
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f21a92ecbfca53c0b59c827c2be98f1
https://doi.org/10.1002/pssb.200301592
https://doi.org/10.1002/pssb.200301592
Publikováno v:
physica status solidi (b). 231:457-461
A study of how well tight-binding models can reproduce the optoelectronic properties of GaAs/ AlAs superlattices is carried out. It is shown that two key parameter sets lead to observable differences in the pseudo-direct energy gap regime, as well as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af30bdda0257ff5ace7633f0d5329e54
https://doi.org/10.1002/1521-3951(200206)231:2<457::aid-pssb457>3.0.co
https://doi.org/10.1002/1521-3951(200206)231:2<457::aid-pssb457>3.0.co
Autor:
Lin Guo, L.R. Ren, L. Ding, Chunlei Yang, Y.Z. Lv, Shihe Yang, W. K. Ge, Chunping Li, Y.H. Zhang, H.B. Xu
Publikováno v:
Journal of Luminescence. :816-818
Single-crystalline ZnO nanorods with an average diameter of 16 nm were fabricated by a simple microemulsion route using dodecyl benzene sulfonic acid sodium (DBS) as a capping agent. Structural characterizations using X-ray diffraction and transmissi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26634da58308dd01d3cbe9e7a4c6ef06
https://doi.org/10.1016/j.jlumin.2006.01.296
https://doi.org/10.1016/j.jlumin.2006.01.296
Autor:
Xudong Yang, Baoquan Sun, Zuyan Xu, W. K. Ge, Iam Keong Sou, Zhenhua Sun, Guobao Li, Yuexia Ji
Publikováno v:
Journal of Luminescence. :402-404
We have systematically investigated the optical properties of isoelectronic centers (IECs) of ZnSTe in the whole composition range from ZnS to ZnTe. In the S-rich ZnSTe photoluminescence is dominated by Te-bound excitons, while in Te-rich side, S-rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31d71ba5c0ed1ed7b1ae92693f892615
https://doi.org/10.1016/j.jlumin.2006.01.158
https://doi.org/10.1016/j.jlumin.2006.01.158
Publikováno v:
Journal of Physics: Condensed Matter. 10:4119-4129
We have investigated the Raman scattering and the photoluminescence (PL) of ZnSxTe1-x mixed crystals grown by MBE, covering the entire composition range (0 less than or equal to x < 1). The results of Raman studies show that the ZnSxTe1-x mixed cryst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13ba6dba6b26e34aea07ac4f820a26a3
https://doi.org/10.1088/0953-8984/10/18/021
https://doi.org/10.1088/0953-8984/10/18/021
Publikováno v:
Applied Physics Letters. 83:2438-2440
Organic dye molecules of styryl 7 were introduced into the channels of AlPO4-5 single crystals. Polarized absorption and photoluminescence spectra of the dye molecules were investigated. The polarization angle dependence of the absorption and photolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2075f4fd2ac3ccc87f201bd0344e3a3
https://doi.org/10.1063/1.1613033
https://doi.org/10.1063/1.1613033
Publikováno v:
Applied Physics Letters. 81:3170-3172
ZnS:Te epilayers with Te concentration from 0.5% to 3.1% were studied by photoluminescence under hydrostatic pressure at 15 K. Two emission bands related to the isolated Te-1 and Te-2 pair isoelectronic centers were observed in the samples with Te co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d83d09db79163b383010f375cd2756a6
https://doi.org/10.1063/1.1517171
https://doi.org/10.1063/1.1517171