Zobrazeno 1 - 10
of 29
pro vyhledávání: '"W. Kürner"'
Autor:
W. Kürner
Publikováno v:
Microelectronic Engineering. 56:41-48
Along with the transition to 300 mm wafers, wafer suppliers, tool vendors and device manufactures are confronted with new challenges. The high quality standard of 200 mm is the baseline for recent developments on 300 mm. Wafer quality, tool reliabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7343487841f76cc98c3355b935c10089
https://doi.org/10.1016/s0167-9317(00)00502-5
https://doi.org/10.1016/s0167-9317(00)00502-5
Publikováno v:
Journal of Applied Physics. 87:1543-1549
Under gravitational and thermal constraints of integrated-circuit (IC) process technology, 300-mm-diam silicon wafers can deform via slip dislocation generation and propagation, degrading the electrical characteristics of the leading edge device. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab89a35ea7357dc602cfc7911d5d8754
https://doi.org/10.1063/1.372047
https://doi.org/10.1063/1.372047
Publikováno v:
Journal of Crystal Growth. 127:107-111
The initial growth process of GaAs on Ge and Si was investigated relating to the segregation of Ge and Si atoms in the hetero-systems with small lattice mismatch and no anti-phase domain. It was clarified that the initial growth process is distorted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6502ed0f9849d8e1db7a7285f925c0e
https://doi.org/10.1016/0022-0248(93)90587-m
https://doi.org/10.1016/0022-0248(93)90587-m
Autor:
B. Lu, W. Kürner, W. Martin, J. Hilgarth, A. Dörnen, K.-D. Rasch, R. J. Dieter, Andreas Hangleiter, V. Frese, F. Scholz, Peter Michler
Publikováno v:
Microelectronic Engineering. 18:189-205
GaAs-AlGaAs heterostructures were grown by low-pressure metalorganic vapour phase epitaxy (MOVPE) and characterized by electrical and optical means. Time resolved photoluminescence revealed purely radiative recombination with carrier lifetimes of abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27d27a532a2c59c71f98422b6a8e4013
https://doi.org/10.1016/0167-9317(92)90128-e
https://doi.org/10.1016/0167-9317(92)90128-e
Publikováno v:
Materials Science Forum. :159-164
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a922e2c32177973b7347d3d3538ebbe9
https://doi.org/10.4028/www.scientific.net/msf.38-41.159
https://doi.org/10.4028/www.scientific.net/msf.38-41.159
Autor:
Heinz Schweizer, W. Kürner, Volker Härle, D. Haase, M. Burkard, M. Schmid, Ferdinand Scholz, A. Dörnen
Publikováno v:
Applied Physics Letters. 69:2525-2527
We analyzed the intrinsic defects and the n‐type‐carrier concentration generated by nitrogen ion implantation in n‐type GaN by deep‐level‐transient spectroscopy and by capacitance–voltage measurements, respectively. The samples were grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f273f106bed6888c36cc75bc5e78b8a3
https://doi.org/10.1063/1.117727
https://doi.org/10.1063/1.117727
Autor:
D. Wiedmann, F. Scholz, A. Dörnen, J. Weber, W. Kürner, C. Hiller, K. Locke, F. Cordeddu, D. Ottenwälder, K. Pressel
Publikováno v:
Applied Physics Letters. 61:560-562
Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal‐organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic infl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a43d5145ad1f8f612c68d2c206b072b
https://doi.org/10.1063/1.107836
https://doi.org/10.1063/1.107836
Autor:
M. Kessler, W. Kürner, D. Ottenwälder, F. Scholz, A. Dörnen, F. Barth, Y. Gao, G. Rückert, Klaus Thonke, K. Pressel
Publikováno v:
Applied Physics Letters. 60:1259-1261
Ti doped InP layers were grown by atmospheric pressure metalorganic vapor phase epitaxy. Using the commercially available tetrakis(diethylamino)‐titanium, we obtained total Ti doping levels up to 1020 cm−3. Photocurrent measurements and deep leve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5d3148fea2725d60bbbd917574ec36a
https://doi.org/10.1063/1.107423
https://doi.org/10.1063/1.107423
Publikováno v:
MRS Proceedings. 591
Process induced crystal defects in silicon wafers can be detected by their stress fields. The nondestructive photoelasticity based on laser polarimetry is applied to visualize the stress fields of temperture gradient induced lattice defects like slip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da821693d4bde2e2ea6156454220e496
https://doi.org/10.1557/proc-591-249
https://doi.org/10.1557/proc-591-249
Publikováno v:
MRS Proceedings. 325
The growth of GaAs epilayers on Si should combine the advantages of both materials. The lattice mismatch and the difference in thermal expansion coefficients, however, result in the yet unsolved problems of high dislocation density and thermal stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4445dbc92769f57af34819aa65e4144d
https://doi.org/10.1557/proc-325-437
https://doi.org/10.1557/proc-325-437