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Autor:
S. Müller, W. Späth, J. Luft, W. Jantz, M. Baeumler, G. Herrmann, Cesare Frigeri, J. L. Weyher
Publikováno v:
Defect Recognition and Image Processing in Semiconductors 1997
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de316c584165184a0e5c7185fc3ba3e2
https://doi.org/10.1201/9781315140810-99
https://doi.org/10.1201/9781315140810-99
Autor:
J. Luft, S. Müller, R. Stibal, K. Sporrer, J. L. Weyher, W. Späth, M. Baeumler, W. Jantz, G. Herrmann
Publikováno v:
Defect Recognition and Image Processing in Semiconductors 1997
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a24422c06f2be97225b8eae79da6bd0
https://doi.org/10.1201/9781315140810-95
https://doi.org/10.1201/9781315140810-95
Autor:
W. Jantz, Helmer Konstanzer, M. Meng, Arnulf Leuther, Maximilian Dammann, Rudiger Quay, Michael Mikulla
Publikováno v:
Microelectronics Reliability. 44:939-943
The reliability and degradation mechanisms of 70 nm gate length metamorphic InAlAs/InGaAs HEMTs for low noise applications will be presented and discussed. Based an a 10% g(ind m max) failure criterion, a median time to failure of 10(exp 6) h and an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf8594720e820805c76b2e732f8be341
https://doi.org/10.1016/j.microrel.2004.01.015
https://doi.org/10.1016/j.microrel.2004.01.015
Publikováno v:
physica status solidi (c). :1013-1018
Semi-insulating silicon carbide single crystals have been grown using high temperature chemical vapor deposition without vanadium doping. The resistivity of standard and exploratory 2″ diameter substrates has been analysed topographically with 1 mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ace375698c7066898c0db430d724eb2e
https://doi.org/10.1002/pssc.200306237
https://doi.org/10.1002/pssc.200306237
Publikováno v:
physica status solidi (a). 195:81-86
The long-term stability of AlGaAs/GaAs and InAlAs/InGaAs high electron mobility transistors (HEMTs), tested under high drain voltage and/or high temperature operation is reported. HEMTs with high In content in the active channel, alternatively fabric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afaa4d2432aee2e24edb2515aea097ce
https://doi.org/10.1002/pssa.200306303
https://doi.org/10.1002/pssa.200306303
Publikováno v:
Materials Science and Engineering: B. :16-20
We report on full wafer and small area photoluminescence topography investigations of VGF GaAs:Si wafers. The wavelength-specific images exhibit various correlations and anti-correlations. Intensity variations due to competitive radiative and non-rad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9003dd9b3431fc000137a910733503f2
https://doi.org/10.1016/s0921-5107(01)00955-2
https://doi.org/10.1016/s0921-5107(01)00955-2
Publikováno v:
Materials Science and Engineering: B. :29-32
Further evidence was found that the 0.8 eV luminescence band in GaAs is correlated to the EL6 defect as identified by photo induced current transient spectroscopy (PICTS). From luminescence topography arguments are put forward that the EL6 defect sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f75b409a611517cbfc25e2153b91c1f8
https://doi.org/10.1016/s0921-5107(01)00959-x
https://doi.org/10.1016/s0921-5107(01)00959-x
Autor:
I. Rechenberg, W. Jantz, Jens W. Tomm, A. Bärwolff, M. Baeumler, J. Luft, Götz Erbert, S. Mueller, Thomas Elsaesser, E. Thamm
Publikováno v:
Applied Physics A: Materials Science & Processing. 70:377-381
Micro-Raman facet temperatures of high-power diode lasers with different waveguide architectures are compared. For regular operation conditions, the thermal behavior of ‘unaged’ arrays emitting in the 808-nm wavelength region with different archi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18d6fc2a4df5005a443756716df65bea
https://doi.org/10.1007/s003390051051
https://doi.org/10.1007/s003390051051