Výsledky vyhledávání - "W. J. Dauksher"

Surface modification and cleaning enhancement of TaSi(N) films with dilute hydrofluoric acid

Autor: R. Whig, W. J. Dauksher, W. L. O’Brien, P. J. S. Mangat

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1211-1215

Amorphous TaSi(N) alloy films are of great interest for application in the fabrication of reticles for next generation lithography and for incorporation into semiconductor devices as barrier layers for Cu processing. The stress characteristics of TaS

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::23344a80b0b12299ec0674c403bc331a
https://doi.org/10.1116/1.582327

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Characterization of plasma enhanced chemical vapor deposited SiC and its application in advanced reticle technology–scattering with angular limitation in projection electron beam lithography membrane

Autor: Steven M. Smith, D. Convey, Richard B. Gregory, W. J. Dauksher, S.-I. Han, P. J. S. Mangat

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1225-1229

In scattering with angular limitation in projection electron beam lithography (SCALPEL) mask technology, the choice of membrane material is an important issue from the perspective of mask performance and manufacturing. Low-pressure chemical vapor dep

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3746cd868d892e8de4c4703ab33433e9
https://doi.org/10.1116/1.582330

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Optimization of an electron cyclotron resonance etch process using full wafer charge coupled device interferometry

Autor: W. J. Dauksher, S. V. Pendharkar, Kevin D. Cummings, W. T. Conner, I. Tepermeister, D. J. Resnick

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:816-819

Full wafer charge coupled device interferometry is a new technique that can be used for in situ monitoring of plasma etching. The use of this technique to optimize an electron cyclotron resonance etch process for TaSiN and its application to x-ray ma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::31e03e05dba8cc2e2e13dcfbc09c4405
https://doi.org/10.1116/1.580713

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Thermal analysis of an x-ray mask membrane in a plasma environment

Autor: Karen A. Thole, W. J. Dauksher, Roxann L. Engelstad, D. J. Resnick, K. D. Cummings, M. Laudon

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:3050

Quantifying the temperatures of a membrane while the mask is in a plasma environment is essential in controlling absorber stress due to deposition, and both etch rate and feature profile due to etching. Temperature gradients across the membrane durin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c5aa6bf1981bc74ba5ea3f7e844f1576
https://doi.org/10.1116/1.588320

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