Zobrazeno 1 - 10
of 28
pro vyhledávání: '"W. J. Croft"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1631-1636
The microstructure and stoichiometry of nitrides formed by direct low‐energy ion beam nitridation has been investigated as a function of ion energy and substrate temperature for Si(100) and SiGe/Si(100) films. Cross‐sectional transmission electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9360a7693beaafc9c6ad83594fb67f14
https://doi.org/10.1116/1.577761
https://doi.org/10.1116/1.577761
Publikováno v:
Materials Science and Engineering: B. 12:97-101
Low energy ion beam oxidation (IBO) of Si(100) and germanium and Si1−xGex grown by molecular beam epitaxy on Si(100) was investigated at room temperature using 18O2+ ion beams with energies E ion ranging from 100 eV to 1 keV. The dependence of phas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af4c00c494aba7cdc36d73d7822e9206
https://doi.org/10.1016/0921-5107(92)90266-c
https://doi.org/10.1016/0921-5107(92)90266-c
Autor:
J. L. Olson, W. J. Croft, O. Vancauwenberghe, Robert J. Culbertson, Nicole Herbots, O. C. Hellman
Publikováno v:
Materials Science and Engineering: B. 12:53-59
Thin films of silicon nitride, germanium nitride and silicon germanium nitride were formed using direct low energy ion beam nitridation. In this process a monoenergetic nitrogen ion beam directly impinges on the material to be nitrided, in the presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::925918242813bcebaf81d7c36d46d266
https://doi.org/10.1016/0921-5107(92)90258-b
https://doi.org/10.1016/0921-5107(92)90258-b
Publikováno v:
MRS Proceedings. 223
Direct Ion Beam Nitridation (IBN) and Oxidation (IBO) of Si, Ge, and Si0.8Ge0.2 were investigated at room temperature as a function of ion energy. The ion energies were selected between 100 eV and 1 keV to establish the role of energy on phase format
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6c1df9aed3bb9a4d9f057d9fcd4a4d7
https://doi.org/10.1557/proc-223-235
https://doi.org/10.1557/proc-223-235
Publikováno v:
Inorganic Chemistry. 20:2631-2634
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6280c4f0b0183f771cf4aacf5cdabbdc
https://doi.org/10.1021/ic50222a048
https://doi.org/10.1021/ic50222a048
Publikováno v:
Journal of Solid State Chemistry. 54:421-425
Samples of VO 2 were prepared at 50 kbar and 800°C in a belt apparatus. The products were then annealed in evacuated silica tubes at 800°C for 1 week. The X-ray diffraction patterns of these samples, before and after annealing, were compared with p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef233cd697274df45091fe4f3ed57893
https://doi.org/10.1016/0022-4596(84)90174-9
https://doi.org/10.1016/0022-4596(84)90174-9
Publikováno v:
Journal of Solid State Chemistry. 62:57-63
V 2 O 3 single crystals have been grown by chemical vapor transport with HCl and TeCl 4 . Crystals grown with TeCl 4 contain V 3 O 5 , as verified by X-ray analysis, and this affects the low temperature transition. Polycrystalline V 2 O 3 has also be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2a592995457641fc986676363605d72
https://doi.org/10.1016/0022-4596(86)90216-1
https://doi.org/10.1016/0022-4596(86)90216-1
Publikováno v:
Physical Review B. 22:32-44
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684a3a72b97a84a236f797b939ab3d1d
https://doi.org/10.1103/physrevb.22.32
https://doi.org/10.1103/physrevb.22.32
Autor:
W. J. Croft, D. G. Wickham
Publikováno v:
Journal of Physics and Chemistry of Solids. 7:351-360
Many useful ferrimagnetic oxides which crystallize with the spinel structure contain several transition metals, each of which can exist in two or more possible oxidation states. A specific formulation for many such materials is very difficult. An app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ec58b5cdfd2876c115af44232067d8f
https://doi.org/10.1016/0022-3697(58)90285-3
https://doi.org/10.1016/0022-3697(58)90285-3
Publikováno v:
Materials Research Bulletin. 5:489-494
The thermal decomposition of diborane, B2H6, has been used as the basis for a method of forming adherent coatings of boron on various substrates. The purity and other properties of the films were studied by emission spectrograph, electron microscope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d881cb806dcb6fe54bff5c7f081163da
https://doi.org/10.1016/0025-5408(70)90057-7
https://doi.org/10.1016/0025-5408(70)90057-7