Zobrazeno 1 - 7
of 7
pro vyhledávání: '"W. H. Konkel"'
Publikováno v:
Journal of Electronic Materials. 22:879-885
Epitaxial layers of CdTe were grown by metalorganic chemical vapor deposition on surfaces of single crystal, {100} GaAs which had been ground, polished, and etched to a spherically shaped done. This dome-shaped surface allowed the morphological and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5c81f0941333e4f6dc4706cffd73ae9
https://doi.org/10.1007/bf02817501
https://doi.org/10.1007/bf02817501
Autor:
Scott M. Johnson, C. A. Cockrum, R. F. Risser, J. A. Vigil, W. J. Hamilton, W. H. Konkel, T. Tung, J. M. Myrosznyk, J. B. James, W. L. Ahlgren, M. H. Kalisher
Publikováno v:
Journal of Electronic Materials. 22:835-842
Large-area HgCdTe 480×640 thermal-expansion-matched hybrid focal plane arrays were achieved by substituting metalorganic chemical vapor deposition (MOCVD)-grown CdZnTe/GaAs/Si alternative substrate in place of bulk CdZnTe substrates for the growth o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b63abda06363e6988f248d349086256
https://doi.org/10.1007/bf02817494
https://doi.org/10.1007/bf02817494
Publikováno v:
MRS Proceedings. 242
Epitaxial and bulk ZnSe of good structural perfection have been grown by vapor-phase techniques. Epitaxial undoped ZnSe layers were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs {100} substrates in a horizontal-flow quartz reactor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684819a6350741c0aa1b0e28763db449
https://doi.org/10.1557/proc-242-273
https://doi.org/10.1557/proc-242-273
Publikováno v:
AIP Conference Proceedings.
The composition of high‐quality single‐crystal bulk‐grown Cd1−yZnyTe (0≤y≤0.2) was determined from precision lattice constant measurements for a total of 22 data points. These samples were used to develop calibration curves for an accurat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbb26d71dcda0b4457b064409f62ed46
https://doi.org/10.1063/1.41071
https://doi.org/10.1063/1.41071
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:2056-2060
It is important to be able to nondestructively characterize (‘‘screen’’) the electrical properties of those areas of HgCdTe epitaxial material that will later be made into devices. This paper compares several noncontact techniques for measuri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4808ef1da0feed6a5a712a1c9dac302b
https://doi.org/10.1116/1.574026
https://doi.org/10.1116/1.574026
Autor:
E. J. Smith, T. Tung, V. B. Harper, B. F. Zuck, R. A. Cole, W. H. Konkel, J. B. James, S. Sen
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:3043-3047
Epitaxial layers of Hg1−xZnxTe (0.11≤x≤0.22) were grown by the horizontal liquid‐phase epitaxy technique on Cd1−yZnyTe substrates with 0≤y≤0.20. The structural and electrical properties of the Hg1−xZnxTe layers were characterized and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::455bc92a707810e2ab4b67171fdfa88e
https://doi.org/10.1116/1.574212
https://doi.org/10.1116/1.574212
Publikováno v:
MRS Proceedings. 161
Single crystals of CdTe or dilute alloys of Cd1−yZnyTe (y ≤ 0.04) and CdTe1−zSez (z ≤ 0.04) with low defect density and large single-crystal area (>30 cm2) are required as substrates for high-quality epitaxial Hg1−xCdxTe thin films in the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c19d7eafa796b5af6032af0f421623f3
https://doi.org/10.1557/proc-161-3
https://doi.org/10.1557/proc-161-3