Zobrazeno 1 - 10
of 46
pro vyhledávání: '"W. H. Knox"'
Publikováno v:
physica status solidi (a). 204:1255-1259
Photochemical etching of silicon assisted by two-photon absorption (TPA) in the presence of hydrofluoric acid (HF) is demonstrated using a below-bandgap femtosecond laser source. We investigate the morphology of the etched silicon as a function of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca5c74cb6e21f9be6a91ea968797f7fe
https://doi.org/10.1002/pssa.200674303
https://doi.org/10.1002/pssa.200674303
Publikováno v:
Journal of Electronic Materials. 19:937-942
We have developed a real-time photoluminescence imaging system. In contrast to scanning systems, in our set-up the photoluminescence is excited over theentire area of a sample at once. The intensity of the spectrally resolved emission from the whole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40290affe8a57b7bb3adef2fb3b72d49
https://doi.org/10.1007/bf02652919
https://doi.org/10.1007/bf02652919
Autor:
Arthur C. Gossard, David A. B. Miller, Gabriela Livescu, John Cunningham, A. M. Fox, W. H. Knox, T. Sizer, John H. English
Publikováno v:
Semiconductor Science and Technology. 5:549-556
Clear evidence for resonant tunnelling of electrons in a p-i-n quantum well modulator is provided by picosecond pump-and-probe electro-absorption measurements. The temperature-independent escape times show a drastic reduction when an electrical field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6e0e1108658846d29a41ae4ad3362cf
https://doi.org/10.1088/0268-1242/5/6/015
https://doi.org/10.1088/0268-1242/5/6/015
Publikováno v:
Ultrafast Electronics and Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::123f0ddc43d1021c4df22c054f0b6516
https://doi.org/10.1364/ueo.1997.ua4
https://doi.org/10.1364/ueo.1997.ua4
Publikováno v:
Ultrafast Phenomena.
We have recently demonstrated that a saturable Bragg reflector (SBR) structure can modelock a diode-pumped Cr:LiSAF (Fig. 1a) laser with very low loss and produce 100 fs pulses with average power of 42 mW using a single 0.5 W broad area 670 nm pump d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b91dc2c577bcf30e7f650f3620710e5
https://doi.org/10.1364/up.1996.tua.3
https://doi.org/10.1364/up.1996.tua.3
Autor:
W. H. Knox
Publikováno v:
Ultrafast Electronics and Optoelectronics.
Research in the field of high speed optoelectronics has resulted in a number of possible applications that could have impact in the "real-world". At present, however, commercially available ultrashort pulse optical sources are generally expensive and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3008964edd7b5477b69c4e3f0cfe24f
https://doi.org/10.1364/ueo.1995.utua1
https://doi.org/10.1364/ueo.1995.utua1
Publikováno v:
Ultrafast Electronics and Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b27185118ff4e5b09225e1017629877
https://doi.org/10.1364/ueo.1995.utua3
https://doi.org/10.1364/ueo.1995.utua3
Publikováno v:
Ultrafast Electronics and Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adc40c7e4c5babb76a4fe0b2999bb0a9
https://doi.org/10.1364/ueo.1995.umb1
https://doi.org/10.1364/ueo.1995.umb1
Publikováno v:
Optical Computing.
The principle of transmitting information using free-space optics poses a serious challenge to collecting diagnostic signals within large-scale digital photonic systems1. High concentrations of parallel optical channels and localized electronic signa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a0f905d06e7c33dde34c42787122819
https://doi.org/10.1364/optcomp.1995.otua1
https://doi.org/10.1364/optcomp.1995.otua1
AlAs/AlGaAs intracavity Saturable Bragg Reflector for Femtosecond self-starting passive mode-locking
Publikováno v:
Quantum Optoelectronics.
We introduce a new semiconductor structure and demonstrate its use as an intracavity femtosecond mode-locker. The structure consists of an AlAs/AlGaAs quarter-wave dielectric stack grown by molecular beam epitaxy. We insert a single quantum well into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfe873df4fcf8cf164ca9299d73ebf34
https://doi.org/10.1364/qo.1995.qwb4
https://doi.org/10.1364/qo.1995.qwb4