Zobrazeno 1 - 2
of 2
pro vyhledávání: '"W. H. Guggina"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :1011-1014
The effects of selective reactive ion etching (SRIE) in SiCl4: SiF4 plasmas on modulation-doped GaAs/Al0.3Ga0.7 As heterostructures have been investigated. Hall effect measurements were conducted to determine SRIE effects on carrier mobility and elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f894f40ca500d44445ad50437196eed8
https://doi.org/10.1016/0168-583x(91)95753-z
https://doi.org/10.1016/0168-583x(91)95753-z
Autor:
Ilesanmi Adesida, W. H. Guggina, James Kolodzey, S. Caracci, J. Hughes, A.A. Ketterson, E. Andideh
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1956
Selective reactive ion etching of GaAs over AlxGa1−xAs using SiF4/SiCl4 gas mixtures is studied. Etch rates of GaAs and AlxGa1−xAs are measured versus pressure, etch gas ratio, and plasma self‐bias voltage. A selectivity ratio of 500:1 has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88c4acff5c685558f2ccf802254e9c98
https://doi.org/10.1116/1.584882
https://doi.org/10.1116/1.584882