Zobrazeno 1 - 10
of 27
pro vyhledávání: '"W. H. Gries"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:2467-2472
Centroid depth determinations by angle‐resolved self‐ratio x‐ray fluorescence spectrometry on ion‐implanted depth profiles have been carried out at a synchrotron radiation source using ‘‘white’’ radiation. For ion implants of phosphor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d7c985aaf704e5ede16668d7338ef1
https://doi.org/10.1116/1.579195
https://doi.org/10.1116/1.579195
Autor:
W. H. Gries
Publikováno v:
Pure and Applied Chemistry. 64:545-574
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50fc6034f005b5f2306ad354272dcb70
https://doi.org/10.1351/pac199264040545
https://doi.org/10.1351/pac199264040545
Publikováno v:
Review of Scientific Instruments. 63:1194-1197
An apparatus for angle‐resolved, wavelength‐dispersive x‐ray fluorescence spectroscopy with synchrotron radiation has been built and tested at the beam line BN2 of the Bonn electron stretcher and accelerator (ELSA). The apparatus is to be used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22d76ddce46ead6dac5212afafd39f7d
https://doi.org/10.1063/1.1143080
https://doi.org/10.1063/1.1143080
Autor:
W. H. Gries
Publikováno v:
Surface and Interface Analysis. 17:803-812
The well-known phenomenon of forward (elastic) scattering pf x-ray photoelectrons and Auger electrons, which gives rise to prominent diffraction peaks for emission from monocrystalline materials, can lead to a much less prominent, yet significant, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec2b51d5dd15a20ea64c3d2f7c115889
https://doi.org/10.1002/sia.740171109
https://doi.org/10.1002/sia.740171109
Publikováno v:
Surface and Interface Analysis. 17:693-704
The attenuation of Auger electrons and photoelectrons in solids as described by the so-called depth distribution function (DDF), has been studied by means of a Monte Carlo simulation of electron transport in matter. Elastic scattering plays a signifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03a1ee56f8342d230dd8de4e8051e7d8
https://doi.org/10.1002/sia.740171003
https://doi.org/10.1002/sia.740171003
Publikováno v:
Surface and Interface Analysis. 17:719-725
The previously reported1,2 effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth ‘cones
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f9238288952935114ad1ebc4591dfb7
https://doi.org/10.1002/sia.740171006
https://doi.org/10.1002/sia.740171006
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:21-26
The emission angle dependence of the depth distribution function of signal electrons in electron spectroscopies has been studied by means of a Monte Carlo simulation in which elastic scattering plays a significant role. Calculations were made for Si,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acb7b937d422efd20dfc10d9ffa9a20b
https://doi.org/10.1116/1.577124
https://doi.org/10.1116/1.577124
Autor:
Wolfgang S. M. Werner, W. H. Gries
Publikováno v:
Surface and Interface Analysis. 16:149-153
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cc175099691dc15dffc7613526b17ba
https://doi.org/10.1002/sia.740160129
https://doi.org/10.1002/sia.740160129
Autor:
W. Koschig, W. H. Gries
Publikováno v:
Surface and Interface Analysis. 16:321-324
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52e28dd0d171d9586cd68f983421a782
https://doi.org/10.1002/sia.740160168
https://doi.org/10.1002/sia.740160168
Publikováno v:
Fresenius' Journal of Analytical Chemistry. 349:144-145
Measurements on the centroid depth of ion-implanted phosphorus-in-silicon specimen by the method of angle-resolved, self-ratio X-ray fluorescence spectrometry (AR/SR/XFS) have been carried out using ‘white’ synchrotron radiation (SR). The measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cda901833e09b76015eb6af234e5bae
https://doi.org/10.1007/bf00323241
https://doi.org/10.1007/bf00323241