Zobrazeno 1 - 10
of 11
pro vyhledávání: '"W. H. Brünger"'
Publikováno v:
Microelectronic Engineering. 27:323-326
The Advanced Lithography Group (ALG) a consortium of industry and university institutes in the US and Europe has the aim to produce an Ion projection lithography tool ALG-1000 for 0.18 @mm geometry and below. The base of the machine is a new ion opti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2eb2fda50b6adf93731ac9eda40d01b
https://doi.org/10.1016/0167-9317(94)00116-c
https://doi.org/10.1016/0167-9317(94)00116-c
Publikováno v:
Microelectronic Engineering. 17:245-248
By applying ion projection lithography an SAW device with 0.3 μm lines and spaces has been printed on a quartz substrate. The problem of complementary masks connected with the use of open stencil masks was solved in this special situation of a linea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::736f60b41cbc4e71b9b6db0ea9a2c834
https://doi.org/10.1016/0167-9317(92)90049-w
https://doi.org/10.1016/0167-9317(92)90049-w
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:2561
Damage in thin (10 nm) oxide layers of metal–oxide–semiconductor varactor cells caused by exposures with ions, electrons, and x rays has been electrically characterized by constant‐current stress time‐dependent dielectric breakdown and capaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d34818da092f83127488fe35b36ab73c
https://doi.org/10.1116/1.588394
https://doi.org/10.1116/1.588394
Autor:
Gerhard Stengl, Hans Loschner, R. Fischer, W. Finkelstein, E. Hammel, E. Cekan, G. Lammer, W. Fallmann, Ivan Berry, W. H. Brünger, J. Fegerl, A. Chalupka, G. Stangl, F. Thalinger, M. Torkler, R. W. Hill, R. Nowak, Lloyd R. Harriott, F. Paschke, H. Vonach, L.‐M. Buchmann, P. Wolf, L. Malek
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:3533
Coulomb interactions in charged particle beams are known to blur beam profiles as the total current is increased. While this has been studied in single ion beam columns, similar studies have not been published, so far, for masked ion beam projection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0713868ccf057f938e4876035d84d77b
https://doi.org/10.1116/1.587465
https://doi.org/10.1116/1.587465
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:3547
Ion projection lithography has been used to structure resist lines running over 0.5‐μm‐high surface steps on a wafer. Line profiles were straight and did not change at the surface step consisting of SiO2 on Si. 0.2‐μm resolution was found in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b16df649cd3aad210c99f39951261856
https://doi.org/10.1116/1.587468
https://doi.org/10.1116/1.587468
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2219
Electron‐beam induced deposition of tungsten from the precursor gas W(CO)6 was investigated with the aim of determining the resolution limiting parameters. By exploring the effect of the beam energy and current, the resolution was found to correlat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76e0692827a98693a8c3459c9c48944d
https://doi.org/10.1116/1.586460
https://doi.org/10.1116/1.586460
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2404
The edge roughness of test patterns fabricated by ion projection lithography has been investigated to indicate the optimum experimental conditions for sub‐100‐nm resolution. Direct observation in a scanning electron microscope, electron metrology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e18d454c1cf2ef9033974d10491440
https://doi.org/10.1116/1.586995
https://doi.org/10.1116/1.586995
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2829
An ion projection system was tested to demonstrate the long‐term stability of lithographic properties. By exposing a resist to He+ ions, the pattern from an open stencil mask was transferred by a surface imaging process into the resist. Even after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d516128778a6756fde1852b991ed54a0
https://doi.org/10.1116/1.585967
https://doi.org/10.1116/1.585967
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2690
Electron‐beam induced deposition (EBID) of tungsten from the precursor gas W(CO)6 was investigated with the aim of enhancing the growth rate of the process. By varying dwell and loop time over a limited range, experimental deposition rates were com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d439d6cdc3b45a3fd1d54cc24394157
https://doi.org/10.1116/1.586027
https://doi.org/10.1116/1.586027
Publikováno v:
Surface and Interface Analysis. 14:401-406
Highly focused electron beams have been scanned across chemical edges of different surface structures in a scanning Auger microscope with a field emission gun. For the case of a fracture plane across a multilayer structure with 100 nm Ta and 100 nm S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::055b5f4aafb69e1591b3eb48cfa7bc18
https://doi.org/10.1002/sia.740140618
https://doi.org/10.1002/sia.740140618