Výsledky vyhledávání - "W. G. van der Wiel"

Akademický článek

Dopant network processing units as tuneable extreme learning machines

Autor: B. van de Ven, U. Alegre-Ibarra, P. J. Lemieszczuk, P. A. Bobbert, H.-C. Ruiz Euler, W. G. van der Wiel

Publikováno v: Frontiers in Nanotechnology, Vol 5 (2023)

Inspired by the highly efficient information processing of the brain, which is based on the chemistry and physics of biological tissue, any material system and its physical properties could in principle be exploited for computation. However, it is no

Externí odkaz: https://doaj.org/article/584e159aa0a847858bfa1dea7d2d7fd1

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The rise of intelligent matter

Autor: Bart Jan Ravoo, W. G. van der Wiel, Wolfram H. P. Pernice, C. Kaspar, Seraphine V. Wegner

Publikováno v: Nature, 594, 345-355. Nature Publishing Group

Artificial intelligence (AI) is accelerating the development of unconventional computing paradigms inspired by the abilities and energy efficiency of the brain. The human brain excels especially in computationally intensive cognitive tasks, such as p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58ded6eca7b45fab254bcec5fa31a721
https://doi.org/10.1038/s41586-021-03453-y

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The rise of intelligent matter

Autor: C, Kaspar, B J, Ravoo, W G, van der Wiel, S V, Wegner, W H P, Pernice

Publikováno v: Nature. 594(7863)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::cf1865a2c6223abba83d4f7002ac777e
https://pubmed.ncbi.nlm.nih.gov/34135518

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Passivation and characterization of charge defects in ambipolar silicon quantum dots

Autor: Floris A. Zwanenburg, Filipp Mueller, S. V. Amitonov, W. G. van der Wiel, P. C. Spruijtenburg

Publikováno v: Scientific Reports
Scientific reports, 6:38127. Nature Publishing Group

In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both bef

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75b81aedff6929e17999a48841ccd53a
http://europepmc.org/articles/PMC5138628

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Gate-Tunable Band Structure of the LaAlO_{3}-SrTiO_{3} Interface

Autor: A E M, Smink, J C, de Boer, M P, Stehno, A, Brinkman, W G, van der Wiel, H, Hilgenkamp

Publikováno v: Physical review letters. 118(10)

The two-dimensional electron system at the interface between LaAlO_{3} and SrTiO_{3} has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate tunability extends to the effective band

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::0bfb7b47de3894b685fb3cfd54a200a6
https://pubmed.ncbi.nlm.nih.gov/28339281

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Retraction

Autor: R. N. Mahato, H. Lülf, M. H. Siekman, S. P. Kersten, P. A. Bobbert, M. P. de Jong, L. De Cola, W. G. van der Wiel

Publikováno v: Science, 350(6257). American Association for the Advancement of Science
Science, 350(6257), 170-170. American Association for the Advancement of Science (AAAS)

Our report “ultrahigh magnetoresistance at room temperature in molecular wires” (1) presents measurements on onedimensional molecular chains confined inside the nanochannels of zeolite L crystals. In these measurements, we observed signals that w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a5729618157b0d4073d1a7822b0265f
https://research.utwente.nl/en/publications/a3f615c1-3f4b-4811-8a8a-006ede8b3ccf

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High-frequency manipulation of few-electron double quantum dots - toward spin qubits

Autor: Susumu Sasaki, Toshimasa Fujisawa, W. G. van der Wiel, Seigo Tarucha, Tetsuo Kodera, Keiji Ono

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 22:518-521

We use a photon-assisted tunneling (PAT) technique to study the high-frequency response of one- and two-electron states in a semiconductor vertically coupled double-dot system. In particular, PAT associated with two-electron spin states in the spin-b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f5684d9aae2f4be7399f164b57adcca
https://doi.org/10.1016/j.physe.2003.12.059

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Electron spin redistribution in a Kondo quantum dot in the low-magnetic-field regime

Autor: S. De Franceschi, Michael Stopa, W. G. van der Wiel, Seigo Tarucha, Leo P. Kouwenhoven

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 22:538-541

We observe an alternation of high and low valley conductance regions as a function of magnetic field for constant electron number in a Kondo quantum dot. The valley conductance also alternates between high and low as a function of electron number at

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0618d647c964d6fa1d7c2ff59376f686
https://doi.org/10.1016/j.physe.2003.12.064

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Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy

Autor: J. M. Elzerman, F. Nakajima, Takashi Fukui, S. De Franceschi, Leo P. Kouwenhoven, W. G. van der Wiel, Y Ogasawara, Junichi Motohisa

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 13(2-4):687-690

We describe transport measurements in a novel dual-gated single electron transistor based on a quantum dot (QD) fabricated by selective area growth of metalorganic vapor phase epitaxy. We observed, for the :rst time, clear Coulomb oscillations fabric

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97213360c0d37c0ee94bc2185eb7983c
http://hdl.handle.net/2115/5535

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