Zobrazeno 1 - 10
of 111
pro vyhledávání: '"W. G. Spitzer"'
Autor:
W. G. Spitzer
Publikováno v:
Advances in Solid State Physics ISBN: 9783528080174
Münster, 22.–26. März 1971 ISBN: 9783112592045
Münster, 22.–26. März 1971 ISBN: 9783112592045
Die folgende Arbeit enthalt einen Uberblick uber die theoretischen und experimentellen Voraussetzungen fur die Beobachtung hochfrequenter, lokalisierter Schwingungsmoden von Storstellen in einem Kristallgitter. Die Diskussion ist beschrankt und die I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7450f85171802be4158c9afb8823270f
https://doi.org/10.1007/bfb0107681
https://doi.org/10.1007/bfb0107681
Publikováno v:
Journal of Applied Physics. 50:6873-6880
Infrared reflection and transmission measurements of Be‐implanted GaAs have been made as functions of Be‐ion fluence and annealing temperatures from 500 to 800 °C. Semi‐insulating material was implanted with 280‐keV ions with fluences of 1×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97fd771fa8381a4f70c9bad934ba3ed1
https://doi.org/10.1063/1.325888
https://doi.org/10.1063/1.325888
Autor:
W. G. Spitzer, J. K. Kung
Publikováno v:
Journal of Applied Physics. 45:4477-4486
Previously reported annealing effects on the carrier density and free‐carrier absorption are correlated with photoluminescence and localized vibrational mode infrared absorption measurements of annealed samples of heavily doped GaAs: Si. Annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f795e66e59a4031e09ffc80950a7c3c
https://doi.org/10.1063/1.1663074
https://doi.org/10.1063/1.1663074
Publikováno v:
Journal of Applied Physics. 58:4553-4564
Several Cr‐doped, low carrier density (10–20 Ω cm), (111)‐oriented wafers of Si were ion implanted at room temperature and ∼90 K with various doses of 12C, 29Si, and 120Sn. The ion energy was 380 keV except for 12C at 90 K where 150 keV was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::733c86706d01c5257048c4c62051c197
https://doi.org/10.1063/1.336271
https://doi.org/10.1063/1.336271
Autor:
C. N. Phillippi, C. A. Carosella, W. G. Spitzer, C.N. Waddell, T. P. Smith, P. R. Malmberg, G. K. Hubler
Publikováno v:
Radiation Effects. 48:81-85
Single crystal silicon has been implanted with nitrogen and phosphorus ions at MeV energies to fluences between 1016 and 1.6 × 1018 ions/cm2. Infrared transmission and reflection spectra in the range of 1.25 to 40 μm were measured for as-implanted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a50286f7a891b618532a1f6c2e326cb
https://doi.org/10.1080/00337578008209233
https://doi.org/10.1080/00337578008209233
Publikováno v:
Journal of Applied Physics. 47:5022-5029
In this study we compare some of the characteristic properties of liquid‐phase epitaxial (LPE) layers of heavily Si‐doped GaAs with those of melt‐grown GaAs : Si. LPE layers are grown isothermally at 750, 840, and 910 °C. All the layers are p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c79341932b7a0adf56590aeb8cff0708
https://doi.org/10.1063/1.322460
https://doi.org/10.1063/1.322460
Autor:
J S Ko, W G Spitzer
Publikováno v:
Journal of Physics C: Solid State Physics. 15:5593-5604
Infrared absorption measurements of localised vibrational modes for CdTe:Li and ZnSe:Li are reported. In the case of CdTe, the Li produces four modes which are attributed to LiCd-Lii nearest-neighbour pairs, where the principal symmetry axis is in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ec1bd6bfde48dd80d1a63f8535e24f1
https://doi.org/10.1088/0022-3719/15/27/015
https://doi.org/10.1088/0022-3719/15/27/015
Autor:
W. G. Spitzer, J. K. Kung
Publikováno v:
Journal of Applied Physics. 45:2254-2257
Silicon‐site distribution in GaAs under the influence of a second dopant was studied by measuring the Si localized vibrational modes and the carrier concentrations of a series of samples. Each sample had the same total Si concentration, [Si], but w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b5726b3277f4d472db3e56644819ac
https://doi.org/10.1063/1.1663572
https://doi.org/10.1063/1.1663572
Publikováno v:
Journal of Applied Physics. 47:5374-5381
Near normal incidence reflection and transmission measurements of GaAs and GaP samples implanted with large doses of ∼3‐MeV ions of 31P+ or 14N+ showed frequency‐dependent maxima and minima in the frequency range 800≲ν≲7500 cm−1. Assumin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a561bb8433f0c189cb6ee629e0c850ab
https://doi.org/10.1063/1.322564
https://doi.org/10.1063/1.322564
Publikováno v:
Applied Physics Letters. 30:623-626
A high‐conductivity layer has been observed within the amorphous region of heavily implanted (6×1016 cm−2 of 2.7‐MeV 31P ions) (111) surfaces of single‐crystal Si after 500 °C annealing. The conducting layer was at the projected range of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8091bf07f84c6093d86c771f5fa4ee2c
https://doi.org/10.1063/1.89284
https://doi.org/10.1063/1.89284