Zobrazeno 1 - 10
of 20
pro vyhledávání: '"W. G. Opyd"'
Autor:
W. G. Opyd, J. F. Gibbons
Publikováno v:
Journal of Applied Physics. 67:7417-7422
Beryllium was ion implanted into GaAs that had been previously amorphized by a liquid‐nitrogen‐temperature arsenic implant. After rapid thermal annealing complete electrical activation of the beryllium was indicated by carrier profiles measured b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04352cc932d37dcf10271ee90a5824cf
https://doi.org/10.1063/1.344531
https://doi.org/10.1063/1.344531
Publikováno v:
Thin Solid Films. 93:301-307
Large-area platinum and palladium Schottky barrier solar cells with diode quality factors approaching unity have been fabricated on magnetron-sputterdeposited hydrogenated amorphous silicon (a-Si:H). Measured optical band gaps and barrier heights are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b83e34c51974fcf0eaf45a76bd2303c
https://doi.org/10.1016/0040-6090(82)90136-5
https://doi.org/10.1016/0040-6090(82)90136-5
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:276-279
The problem of Hg loss from HgCdTe is investigated for rapid thermal processing of device quality material. Outdiffusion of Hg from HgCdTe is characterized by fitting calculated diffusion profiles to measurements by Rutherford backscattering spectrom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed54dcf67397d2f06adc3af88625ec28
https://doi.org/10.1116/1.573216
https://doi.org/10.1116/1.573216
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:1661-1665
An important problem in processing the infrared detector material Hg1−xCdxTe is avoiding undue mercury loss. Here we quantify that loss and apply the information to the annealing of ion implanted Hg1−xCdxTe. We thus extend the work of Takita et a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d90041f956ad81254c9adc9d7692f97
https://doi.org/10.1116/1.572251
https://doi.org/10.1116/1.572251
Publikováno v:
Nuclear Instruments and Methods in Physics Research. :651-655
Mercury loss from Hg 1− x Cd x Te as a function of temperature has been investigated using a thermal pulse annealing system and Rutherford backscattering spectrometry (RBS). Preliminary results indicate the loss rate is a strong function of the x v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f29dba7ab00214d6e114f2137a26e62f
https://doi.org/10.1016/0167-5087(83)90862-1
https://doi.org/10.1016/0167-5087(83)90862-1
Publikováno v:
Journal of Applied Physics. 61:2079-2082
We present measurements and analysis of high‐quality photoluminescence (PL) data from strained In0.13Ga0.87As quantum wells confined by unstrained GaAs barriers. Data were obtained from low temperature to room temperature on peak positions, intensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04f59c7843c03d172d02c07ee3585687
https://doi.org/10.1063/1.338011
https://doi.org/10.1063/1.338011
Publikováno v:
Applied Physics Letters. 49:974-976
Extended defects in GaAs are investigated following epitaxial regrowth of amorphous layers. GaAs surface layers were amorphized by Si+ implants at liquid‐nitrogen temperature. Anneals were performed for 4 s to 30 min from 150 to 885 °C. Rutherford
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9430a9c9e981bb825f44cdc2fe77db21
https://doi.org/10.1063/1.97500
https://doi.org/10.1063/1.97500
Publikováno v:
Applied Physics Letters. 41:750-752
Crystal damage, caused by a 1015 11B/cm2 250‐keV implant into epitaxial Hg0.64Cd0.36Te layers held at LN2 temperature, has been successfully annealed, as observed by MeV 4He ion channeling and Rutherford backscattering. The anneal consists of a the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dc1d219bc61fe16562d9ffa10cb2d91
https://doi.org/10.1063/1.93665
https://doi.org/10.1063/1.93665
Publikováno v:
Journal of Applied Physics. 61:2407-2409
SiGe/Si superlattices were grown using limited reaction processing. Each multilayer structure was fabricated in situ by changing the gas composition between high‐temperature cycles. Commensurate SiGe alloy layers as thin as 15 nm were reproducibly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e56271de2bb41e2a0685a977bc704d4
https://doi.org/10.1063/1.337960
https://doi.org/10.1063/1.337960
Publikováno v:
Applied Physics Letters. 51:916-918
We have developed a novel rapid thermal processor to perform annealing of ion‐implanted GaAs in a trimethylarsenic overpressure. This has allowed study of arsenic ambient annealing in a time/temperature regime not accessible with an arsine furnace.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cae5ee78029df7cd07a2b53f8ab0f36e
https://doi.org/10.1063/1.98800
https://doi.org/10.1063/1.98800