Zobrazeno 1 - 10
of 297
pro vyhledávání: '"W. Faschinger"'
Autor:
R. B. Neder, A. S. Bader, T. Schallenberg, Laurens W. Molenkamp, W. Faschinger, Norbert Schwarz, C. Schumacher
Publikováno v:
Journal of Applied Physics. 95:5494-5497
In this contribution a model for the elastic relaxation of Al0.5Ga0.5As and ZnSe wire structures, respectively, is presented. The wire structures extend along [110] and were characterized by high resolution x-ray diffraction experiments. Based on Mon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e8a88207bfdf7ee1d940afb5bb1672
https://doi.org/10.1063/1.1664020
https://doi.org/10.1063/1.1664020
Autor:
Reinhard B. Neder, Karl Brunner, A. S. Bader, Laurens W. Molenkamp, W. Faschinger, C. Schumacher
Publikováno v:
physica status solidi (c). 1:815-818
We present results on the elastic relaxation behaviour of II-VI and III-V wire structures. The structures were obtained by wet etching of extended layers as well as shadow mask assisted Selected Area Epitaxy (SAE). The SAE wire structures are especia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::179431153bc708307f79aeeff854e1a0
https://doi.org/10.1002/pssc.200304294
https://doi.org/10.1002/pssc.200304294
Autor:
Fritz Henneberger, Dmitri R. Yakovlev, Joachim Puls, V. P. Kochereshko, G. V. Mikhailov, A. V. Platonov, W. Faschinger
Publikováno v:
International Journal of Nanoscience. :453-459
Time-resolved and time-integrated circularly-polarized photoluminescence of excitons and trions have been studied in external magnetic fields up to 10 T. ZnSe-based quantum well structures of n-type with carrier densities varied from 5×109 to 1011 c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e010632941cef5b23e4e3bee197cd8d3
https://doi.org/10.1142/s0219581x03001553
https://doi.org/10.1142/s0219581x03001553
Autor:
Ch. Ammon, Hans-Peter Steinrück, Eberhard Umbach, Andrzej Fleszar, C. Schumacher, S. Gundel, Clemens Heske, M. Probst, W. Faschinger, Th. Gleim
Publikováno v:
Surface Science. 531:77-85
We have investigated the underlying electronic and structural effects of the previously published influence of a Te substrate pretreatment on the heterovalent ZnSe/GaAs(1 0 0) interface [Appl. Phys. Lett. 78 (2001) 1867]. For this purpose, photoelect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f6b829cc7335f3d8697ab8919d574cd
https://doi.org/10.1016/s0039-6028(03)00439-4
https://doi.org/10.1016/s0039-6028(03)00439-4
Autor:
Tomasz Wojtowicz, V. P. Kochereshko, Grzegorz Karczewski, W. Ossau, Jacek Kossut, G. V. Astakhov, G. Landwehr, Dmitri R. Yakovlev, W. Faschinger
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 17:197-200
We present a detailed study of combined exciton-electron processes in modulation doped quantum well structures contain a 2DEG of low density. We observed resonance exciton-electron processes in magnetic fields reveal in a separate narrow spectral lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a31a696bb8f2b8b13e5377bc1dc9814
https://doi.org/10.1016/s1386-9477(02)00765-8
https://doi.org/10.1016/s1386-9477(02)00765-8
Publikováno v:
Thin Solid Films. 412:24-29
We investigate molecular beam epitaxy (MBE) regrowth through shadow masks developed from AlGaAs/GaAs layers on GaAs [001] substrates. Adjusting the directions of the molecular beams relative to the masks results in in situ lateral structuring. This e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58d3ceeb641acf3ef7319e6501b98f7e
https://doi.org/10.1016/s0040-6090(02)00307-3
https://doi.org/10.1016/s0040-6090(02)00307-3
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 13:1212-1215
We discuss the possibilities of MBE regrowth through shadow masks for semiconductor technology. II–VI and III–V compound semiconductors have been deposited into fixed shadow masks developed from AlGaAs/GaAs layers on GaAs [0 0 1] substrates. Adju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23297ff380542a8e73018d60b66c9468
https://doi.org/10.1016/s1386-9477(02)00338-7
https://doi.org/10.1016/s1386-9477(02)00338-7
Autor:
W. Weigand, Laurens W. Molenkamp, W. Faschinger, A. S. Bader, Christian Kumpf, A. Möginger, C. Schumacher, M. Sokolowski, Eberhard Umbach
Publikováno v:
physica status solidi (b). 229:117-121
Thin pseudomorphic ZnSe films can be grown by molecular beam epitaxy on GaAs(001) up to a layer thickness of about 100 nm. Above this critical thickness the topmost layers relax by forming large mosaic-domains which are tilted by 0.2° with respect t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33042fbf9926b0999485732a551112fa
https://doi.org/10.1002/1521-3951(200201)229:1<117::aid-pssb117>3.0.co
https://doi.org/10.1002/1521-3951(200201)229:1<117::aid-pssb117>3.0.co
Publikováno v:
physica status solidi (b). 229:543-547
In modulation-doped ZnSe/(Zn,Mg)(S,Se) quantum well structures with electron concentration of about 10 cm - a new resonant optical transition involving four particles (one hole and three electrons) was found in external magnetic fields in photolumine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9361319106d9d9bd4df2901de569feb6
https://doi.org/10.1002/1521-3951(200201)229:1<543::aid-pssb543>3.0.co
https://doi.org/10.1002/1521-3951(200201)229:1<543::aid-pssb543>3.0.co
Autor:
Dmitri R. Yakovlev, Joachim Puls, Fritz Henneberger, S. Schwertfeger, W. Faschinger, G. V. Mikhailov
Publikováno v:
physica status solidi (b). 227:331-337
The influence of high-density optical excitation on n-doped ZnSe/(Zn,Mg)(S,Se) quantum wells is studied by quasi-stationary photoluminescence and pump-probe experiments. In photoluminescence, the trion and exciton transitions saturate weakly with inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bc6145b2126dd532e078e8d36972963
https://doi.org/10.1002/1521-3951(200110)227:2<331::aid-pssb331>3.0.co
https://doi.org/10.1002/1521-3951(200110)227:2<331::aid-pssb331>3.0.co