Zobrazeno 1 - 10
of 10
pro vyhledávání: '"W. F. Kho"'
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this paper, a method to detect shorts at the gates of the storage node of a 6T SRAM bit cell via atomic force probing (AFP) at the Via 1 level is discussed. This method is useful for the preservation of physical evidence as well as to ease the pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fad1a54ec11564d6605b0a636426c1b3
https://doi.org/10.1109/ipfa.2017.8060219
https://doi.org/10.1109/ipfa.2017.8060219
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Ultrasonic cleaner is a workhorse in all failure analysis labs for residue removal after decapsulation or etching. In this paper, we present a novel method of ultrasonic decapsulation, where acid mixture was used in conjunction with ultrasonic agitat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ba999152edd29748f1a4a2c2635ff9d
https://doi.org/10.1109/ipfa.2017.8060103
https://doi.org/10.1109/ipfa.2017.8060103
Autor:
Jethro Tan, W. F. Kho
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In situ lift out is a mature and well established technique for TEM sample preparation [1]. There are occasions though, when lift out fails, and the TEM lamella falls into the TEM trench during sample preparation. In a previous study [2], the lamella
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d52cca4dc977064b369ce3f7296cf6ea
https://doi.org/10.1109/ipfa.2017.8060100
https://doi.org/10.1109/ipfa.2017.8060100
Autor:
Gary H.G. Chan, W. F. Kho
Publikováno v:
International Symposium for Testing and Failure Analysis.
Contamination by particles is one of the major causes of failures in integrated circuits. In some cases, particles may absorb moisture leading to electrochemical migration, dendrite growth, and electrical leakage and short failures. This work present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6725c562395e4b91bf863c52b913ead
https://doi.org/10.31399/asm.cp.istfa2016p0613
https://doi.org/10.31399/asm.cp.istfa2016p0613
Publikováno v:
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Under non-optimized wafer probe and wire bonding conditions, pad cratering/interlevel dielectric (ILD) cracks may result in an electrical failure. The conventional procedures to analyse these failures include fault localization, optical inspection, S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42be8ca2f5bf71095a9129fe599094c3
https://doi.org/10.1109/ipfa.2016.7564272
https://doi.org/10.1109/ipfa.2016.7564272
Publikováno v:
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Occurrences of failure recovery in the course of failure analysis work are not uncommon. Despite this, successful identification of the failure mechanism is still possible in some cases based on available data up to the point of failure recovery, cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffedbd0337afe8151449c2003880512a
https://doi.org/10.1109/ipfa.2016.7564327
https://doi.org/10.1109/ipfa.2016.7564327
Autor:
Gary H. G. Chan, W. F. Kho
Publikováno v:
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Copper dendrites on a flip chip die was analysed by SEM/EDX, FIB and TEM. The dendrites were found to consist of two layers. The upper layer visible under optical and SEM inspection consist of a carbon rich copper compound. TEM analysis revealed anot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::650db5413c42062d0fa80f363a6a39a3
https://doi.org/10.1109/ipfa.2015.7224459
https://doi.org/10.1109/ipfa.2015.7224459
Autor:
Rachel Siew, W. F. Kho
Publikováno v:
Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47636049fa23b812623d3f74761b8fdf
https://doi.org/10.1109/ipfa.2014.6898134
https://doi.org/10.1109/ipfa.2014.6898134
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
High fall out due to EEPROM failures were encountered during qualification of a device. All failures exhibit several random bits of EEPROM that cannot be erased. The root cause of the failure was due to out diffusion of phosphorus dopant under the fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b1fc45b7cb493261c924d890fca09e1
https://doi.org/10.1109/ipfa.2013.6599150
https://doi.org/10.1109/ipfa.2013.6599150
Publikováno v:
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
In analysis of copper wire moisture related reliability failures long hours are spent on the FIB tool. Two techniques are introduced to reduce the long analysis time: 1) An alternative FIB trenching method that reduces milling duration by 5X and, 2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa54279f978a0647c76250eb1c4a1807
https://doi.org/10.1109/ipfa.2012.6306278
https://doi.org/10.1109/ipfa.2012.6306278