Zobrazeno 1 - 10
of 17
pro vyhledávání: '"W. F. A. Besling"'
Publikováno v:
IEEE Transactions on Advanced Packaging, 33(4), 1072-1079. Institute of Electrical and Electronics Engineers
High-aspect ratio (12.5) through silicon vias (TSV) made in a silicon interposer have been electrically characterized in the direct current (dc) and microwave regimes for 3D interconnect applications. The vias were micro-machined in silicon, insulate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f62ad7fc0a0bab7bc847e51d3be1e7ce
https://doi.org/10.1109/TADVP.2010.2046166
https://doi.org/10.1109/TADVP.2010.2046166
Publikováno v:
Microelectronic Engineering. 82:254-260
Besides cost reduction and yield optimisation, advanced interconnect development is nowadays driven by continuous resistance and capacitance improvement in order to reduce RC-delay with shrinking line dimensions. In order to attain these aggressive g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b4fc14507baa11955f651d8d9a00edd
https://doi.org/10.1016/j.mee.2005.07.031
https://doi.org/10.1016/j.mee.2005.07.031
Publikováno v:
Microelectronic Engineering. 76:167-174
The down scaling of interconnect wiring is facing serious hurdles below 100 nm feature size due to a non-linear resistivity increase with decreasing line width. Moreover, the use of porous low-k dielectrics in combination with narrow line dimensions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c01b3e0f9b0de9c260ee820cb00760d
https://doi.org/10.1016/j.mee.2004.07.046
https://doi.org/10.1016/j.mee.2004.07.046
Autor:
Marie-Laurence Ignacimouttou, Maxime R. L. Mellier, W. F. A. Besling, Joaquin Torres, Aurelie Humbert
Publikováno v:
Microelectronic Engineering. 76:60-69
''Continuity and Morphology of TaN barriers deposited by Atomic Layer Deposition and Comparison with Physical Vapor Deposition'': After barrier deposition the samples were exposed to a HF solution at various concentrations and various exposure times
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7252bbc5c3924ff1449a41bb90c4b107
https://doi.org/10.1016/j.mee.2004.07.015
https://doi.org/10.1016/j.mee.2004.07.015
Publikováno v:
The Review of scientific instruments. 85(1)
The design of a fluidized bed atomic layer deposition (ALD) reactor is described in detail. The reactor consists of three parts that have all been placed in one protective cabinet: precursor dosing, reactor, and residual gas treatment section. In the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c46fece726f46fa16a6db7bcde6e05b
https://pubmed.ncbi.nlm.nih.gov/24517780
https://pubmed.ncbi.nlm.nih.gov/24517780
Autor:
Sandrine Lhostis, Canan Baristiran Kaynak, Guenther Ruhl, E Erik Langereis, P. Baumann, Suvi Haukka, Aomar Halimaou, Mindaugas Lukosius, A. Roest, Fred Roozeboom, Benoît Riou, Wolfgang Lehnert, Tom E. Blomberg, Christian Wenger, Wilhelmus M. M. Kessels, W. F. A. Besling, Andy Zauner, Simon A. Rushworth
Publikováno v:
ECS Journal of Solid State Science and Technology, 3(8), N120-N125. Electrochemical Society, Inc.
Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f4e1fab2ef5736482a51f5bd29bebdb
https://research.tue.nl/nl/publications/8b003621-69a1-40e9-80cc-8be45bf67d39
https://research.tue.nl/nl/publications/8b003621-69a1-40e9-80cc-8be45bf67d39
Publikováno v:
Journal of Applied Physics. 83:544-553
Laser-induced chemical vapor deposition of silicon carbonitride thin films has been investigated using a continuous wave CO2 laser in parallel configuration with the substrate. The reactant gases in this process, hexamethyl disilazane and ammonia, ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d74b6d886a2751b0c24c3fde27c09a23
https://doi.org/10.1063/1.366669
https://doi.org/10.1063/1.366669
Autor:
V.H. Nguyen, Romano Hoofman, W. F. A. Besling, M. Broekaart, Vincent Arnal, M. Fayolle, L.G. Gosset, Francesca Iacopi
Publikováno v:
Dielectric Films for Advanced Microelectronics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af8a3ca1ece2081af6dc83ae5151110d
https://doi.org/10.1002/9780470017944.ch5
https://doi.org/10.1002/9780470017944.ch5
Autor:
C. Maurice, E. Sabouret, H. Bono, Alexis Farcy, M. Guillermet, E. Richard, M. Zaleski, D. Reber, Lucile Broussous, Cindy K. Goldberg, J. Mueller, V. Girault, T. Berger, R. Gonella, E. Ollier, V. Plantier, Vincent Arnal, M. Mellier, P. Brun, Aurelie Humbert, B.G. Sharma, John C. Flake, C. Monget, P. Vannier, Robert Fox, J.P. Jacquemin, A. Schussler, G. Imbert, W. F. A. Besling, O. Hinsinger, S. Maubert
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
An enhanced trench first hard mask (TFHM) backend integration architecture has been developed to facilitate straightforward ultra low-k (ULK) material insertion and to enable rapid yield learning at the 65nm technology node. Parametric, yield, reliab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98adba0651beb41120297b313a8d7177
https://doi.org/10.1109/iedm.2005.1609272
https://doi.org/10.1109/iedm.2005.1609272
Autor:
M. Mellier, J.C. Dupuy, P. Brun, G. Imbert, A. Margain, S. Jullian, Joaquim Torres, R. Gras, S. Chhun, W. F. A. Besling, J. Guillan, T. Van ypre, E. Ollier, L.G. Gosset
Publikováno v:
Proceedings of the IEEE 2006 International Interconnect Technology Conference
Proceedings of the IEEE 2006 International Interconnect Technology Conference, 2006, pp.(IEEE Cat. No. 06TH8862C) (2006) 3
Proceedings of the IEEE 2006 International Interconnect Technology Conference, 2006, pp.(IEEE Cat. No. 06TH8862C) (2006) 3
A hybrid CoWP/SiCN Cu passivation was integrated in a three-metal-level interconnect stack at 65 nm technology node using a porous ULK material (K=2.5). 5 and 20 nm thick Pd-free CoWP electroless barriers were evaluated using a standard trench first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f447880d6a079381aecf9c8271a4ddcf
https://doi.org/10.1109/iitc.2006.1648638
https://doi.org/10.1109/iitc.2006.1648638