Zobrazeno 1 - 10
of 16
pro vyhledávání: '"W. E. Mayo"'
Publikováno v:
Journal of Bone and Mineral Research. 16:893-900
This article describes a novel technology for quantitative determination of the spatial distribution of CO3(2-) substitution in bone mineral using infrared (IR) imaging at approximately 6 microm spatial resolution. This novel technology consists of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70b130f59d5801c4f1d3ef162e8e935f
https://doi.org/10.1359/jbmr.2001.16.5.893
https://doi.org/10.1359/jbmr.2001.16.5.893
Publikováno v:
Ferroelectrics. 249:135-144
We report high-resolution far-infrared transmission measurements on 2D rhombohedral and 1D orthorhombic high-pressure-high-temperature C60 polymers and the doubly-bonded dimer, between 20 and 650 cm-1. Symmetry-breaking of the linked C60 balls is evi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e500bd1444545ad28f4d77f6ad6042f
https://doi.org/10.1080/00150190108214975
https://doi.org/10.1080/00150190108214975
Autor:
John B. Page, V. C. Long, G. B. Adams, Janice L. Musfeldt, Katalin Kamarás, Yoshihiro Iwasa, W. E. Mayo
Publikováno v:
Physical Review B. 61:13191-13201
We report high-resolution far-infrared transmission measurements of the 2 + 2 cycloaddition C-60 dimer and two-dimensional rhombohedral and one-dimensional orthorhombic high-pressure high-temperature C60 polymers. In the spectral region investigated(
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef3a52c464c29cdc557cf6cf22429285
https://doi.org/10.1103/physrevb.61.13191
https://doi.org/10.1103/physrevb.61.13191
Publikováno v:
Ferroelectrics. 223:11-18
Structure-property relations in meaoscopic BaTiO3 and PbTiO3 are reviewed from the stand-point of effects of crystallite size on intrinsic behavior using the Landau-Ginzburg-Devonshire formalism. Experimental results based on x-ray diffrdctometry and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63f086718111aa4f32a5711ded7e1845
https://doi.org/10.1080/00150199908260547
https://doi.org/10.1080/00150199908260547
Publikováno v:
CORROSION. 49:675-682
Experimental evidence supported a previous theoretical analysis of the strain state in heavily deformed C-rings, which are used often for accelerated testing for stress corrosion cracking. The model accounted for large shape changes that accompany C-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6074e691dff2b3a213c19e30e8d77da9
https://doi.org/10.5006/1.3316099
https://doi.org/10.5006/1.3316099
Autor:
C. S. Chern, Y. Li, P. Zawadzki, S. Krishnankutty, R. A. Stall, R. M. Kolbas, Stephen J. Pearton, C. Yuan, Yicheng Lu, W. E. Mayo, Alexander I. Gurary, C.-Y. Hwang, M. Schurman, T. Salagaj, W. Kroll
Publikováno v:
ChemInform. 27
Very high quality p-type GaN thin films have been epitaxially grown on c-sapphire substrates by the MOCVD technique in a multiwafer rotating-disk reactor at 1040°C with a GaN buffer layer of ∼200 A grown at 530°C. The undoped GaN films have a low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cd53cd1ea59afc68c8e509952b9cb70
https://doi.org/10.1002/chin.199601285
https://doi.org/10.1002/chin.199601285
Autor:
Stephen J. Pearton, C. S. Chern, R. A. Stall, T. Salagaj, P. Zawadzki, C. Yuan, Y. Li, M. Schurman, W. E. Mayo, W. Kroll, S. Krishnankutty, Alexander I. Gurary, C.-Y. Hwang, R. M. Kolbas, Yicheng Lu
Publikováno v:
Journal of The Electrochemical Society. 142:L163-L165
Very high quality p-type GaN thin films have been epitaxially grown on c-sapphire substrates by the MOCVD technique in a multiwafer rotating-disk reactor at 1040°C with a GaN buffer layer of ∼200 A grown at 530°C. The undoped GaN films have a low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd2125dbfcf2a039423b7e6a7b1184ae
https://doi.org/10.1149/1.2048735
https://doi.org/10.1149/1.2048735
Autor:
W. E. Mayo, B. H. Kear
Publikováno v:
Nanostructured Films and Coatings ISBN: 9780792362661
Hardcoatings of WC/12Co and Al2O3/13TiO2, produced by High Velocity Oxy-Fuel (HVOF) and High Energy Plasma (HEP) spraying, have been investigated. In HVOF spraying, nanostructured WC/Co coatings experience more extensive decarburization than conventi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bdca4e092784464e0eecf5b8f1ed108
https://doi.org/10.1007/978-94-011-4052-2_10
https://doi.org/10.1007/978-94-011-4052-2_10
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:1404
We have optimized the In0.5(AlxGa1−x)0.5P/In0.2Ga0.8As high electron mobility transistor’s (HEMT’s) design by considering the material aspects of conduction band discontinuity, indirect-to-direct band electron transfer, donor-related deep level
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::811bd656ec52a8d5b04538fda8a205aa
https://doi.org/10.1116/1.590084
https://doi.org/10.1116/1.590084
Autor:
W. Kroll, T. Salagaj, S. Krishnankutty, A.G. Thompson, A. Gurary, C.-Y. Hwang, I. K. Shmagin, Richard A. Stall, Stephen J. Pearton, Y. Li, W. E. Mayo, C. Yuan, R. M. Kolbas, M. J. Schurman, Yicheng Lu
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:2075
n‐ and p‐doped GaN thin films have been epitaxially grown on c‐sapphire substrates by metal‐organic chemical‐vapor deposition in a production scale multiwafer‐rotating‐disk reactor. The in situ doping was performed with material having
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5f3b40d249e05bcea6634b386ec4e2b
https://doi.org/10.1116/1.588080
https://doi.org/10.1116/1.588080