Zobrazeno 1 - 10
of 15
pro vyhledávání: '"W. E. Hoke"'
Publikováno v:
ECS Transactions. 50:1039-1045
Standard Si CMOS and SiGe BiCMOS enable unparalleled integration density, yield, and functionality on a single chip. In addition to realization of high performance mixed signal circuits, such as data converters, there have been many impressive demons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b48331d9e9dc7c7302a10b35022940df
https://doi.org/10.1149/05009.1039ecst
https://doi.org/10.1149/05009.1039ecst
Autor:
Thomas E. Kazior, P.F. Marsh, C.S. Whelan, Iii. R.E. Leoni, S.J. Lichwala, W. E. Hoke, P. J. Lemonias, S.M. Lardizabal, P. Lyman, R.A. McTaggart
Publikováno v:
IEEE Journal of Solid-State Circuits. 35:1307-1311
This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0992f9e74ff0157ca54b0b447bb9b583
https://doi.org/10.1109/4.868040
https://doi.org/10.1109/4.868040
Publikováno v:
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Advances in silicon technology continue to revolutionize microelectronics. However, Si cannot do everything and circuits based on other materials systems are required. What is the best way to integrate these dissimilar materials and enhance the capab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f07d79223beb2b068b62b0de1d3fc504
https://doi.org/10.1109/csics.2013.6659239
https://doi.org/10.1109/csics.2013.6659239
Autor:
J. Bergman, Nicolas Daval, J. R. LaRoche, Smith David E A, Robin. F. Thompson, Mayank T. Bulsara, Ying Wu, Bobby Brar, Charlotte Drazek, Amy W. K. Liu, Lamine Benaissa, Thomas E. Kazior, Wonill Ha, Andrew Synder, Emmanuel Augendre, Miguel Urteaga, Dmitri Lubyshev, Eugene A. Fitzgerald, Myung-Jun Choe, Joel M. Fastenau, W. E. Hoke, A. Torabi, D. T. Clark
Publikováno v:
MRS Proceedings. 1194
We report on a direct epitaxial growth approach for the heterogeneous integration of high speed III-V devices with Si CMOS logic on a common Si substrate. InP-based heterojunction bipolar transistor (HBTs) structures were successfully grown on patter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e48cc864b5d6555786644d57b9493b5
https://doi.org/10.1557/proc-1194-a09-01
https://doi.org/10.1557/proc-1194-a09-01
Autor:
T. Stewart, J. Patton, Stefan P. Svensson, C. Meaton, D. Lubyshev, A. B. Cornfeld, W. E. Hoke, P. F. Marsh, Joanna Mirecki Millunchick, W. K. Liu, K. Nichols
Publikováno v:
Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).
Metamorphic high electron mobility transistor (MHEMT) structures with In/sub 0.53/Ga/sub 0.47/As channels were grown by molecular beam epitaxy on GaAs substrates using As-, P-, and Sb-based buffer layers. Structural, electrical, and optical character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36bb05bcc5cbfbbc36a01a5b35118fcb
https://doi.org/10.1109/iciprm.2000.850315
https://doi.org/10.1109/iciprm.2000.850315
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:1234
We report on the characterization of GaN/AlGaN high electron mobility transistor (HEMT) structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition techniques on semi-insulating SiC substrates. We have exploited the surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7bfeb09fa5c0c543ab2fed150c22c52
https://doi.org/10.1116/1.1481874
https://doi.org/10.1116/1.1481874
Autor:
M. Naidenkova, T. R. Stewart, W. E. Hoke, A. B. Cornfeld, X. M. Fang, Dmitri Lubyshev, Stefan P. Svensson, C F Kisielowski, C. S. Whelan, Petra Specht, M. S. Goorsky, J. Mirecki Millunchick, P. F. Marsh, W. K. Liu, X. Xu
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:1510
Plastic relaxation in metamorphic high electron mobility transistor (MHEMT) structures was investigated by x-ray reciprocal mapping and high-resolution transmission electron microscopy (HRTEM). X-ray data indicates that In(Ga)AlAs M buffers with a li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::497644593a33fcbe80e4f99f1245d1e3
https://doi.org/10.1116/1.1376384
https://doi.org/10.1116/1.1376384
Autor:
W. E. Hoke, P. J. Lemonias
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:2009
The growth of phosphide films by solid source molecular beam epitaxy presents challenges in regard to safety, oxygen contamination, and disposal of residual phosphorus. Upon venting the growth chamber after phosphide growth, phosphine concentrations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f7d21463de6902205400fe8ba1f8c5f
https://doi.org/10.1116/1.590863
https://doi.org/10.1116/1.590863
Publikováno v:
The Journal of Chemical Physics. 68:1439-1443
The rotational Zeeman effect in vinyl formate was observed. The rotational molecular g values are gaa=−0.1759±0.0010, gbb=−0.0342±0.0006, and gcc=−0.0059±0.0006. The magnetic susceptibility anisotropies in units of 10−6 erg G−2 mole−1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37b5f0a9f0cf9e5a5f14608b640b2b07
https://doi.org/10.1063/1.435965
https://doi.org/10.1063/1.435965