Dry Etching of Single‐Crystal Silicon Trench in Hydrogen Iodide Containing Plasmas: I . Pure

Autor: W. E. Frank, T. Chabert

Publikováno v: Journal of The Electrochemical Society. 140:490-495

Hydrogen iodide (HI) has been introduced for plasma etching of single-crystal silicon trench. For part I of this work, pure HI chemistry has been investigated. HI forms an intensive, easily ignitable, and sustainable plasma, characterized by a very l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e165daaf7f0e483b05cd186fa521a3da
https://doi.org/10.1149/1.2221074

A time course study on STR profiles derived from human bone, muscle, and bone marrow

Autor: W E, Frank, B E, Llewellyn

Publikováno v: Journal of forensic sciences. 44(4)

The use of the polymerase chain reaction (PCR) to define deoxyribonucleic acid (DNA) types at several loci was investigated. PCR was used to amplify nine short tandem repeat (STR) loci along with the amelogenin locus on the X and Y chromosomes using

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::4e02a0e5c35631b4ea1a87b1df32935e
https://pubmed.ncbi.nlm.nih.gov/10432612

Estimation of Diffusion Weight Imaging and Perfusion-Weighted Imaging Volume by Texture Methods.

Autor: Akıl, Muhammed Fatih¹ (AUTHOR), Ertuğrul, Ömer Faruk¹ (AUTHOR) omerfaruk.ertugrul@batman.edu.tr

Publikováno v: Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ). Aug2023, Vol. 48 Issue 8, p10575-10588. 14p.

Chronic atrial fibrillation: spontaneous conversion to sinus rhythm. Improvement in arrythmia may actually represent a worsening of the conduction system

Autor: A H, Khan, B, Moreno, W E, Frank

Publikováno v: Rhode Island medical journal. 60(6)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::e026e74f7cebe2ace23ae117b0526bc3
https://pubmed.ncbi.nlm.nih.gov/267287

High-Yield Production of High-κ/Metal Gate Nanopattern Array for 2D Devices via Oxidation-Assisted Etching Approach.

Autor: Hong W; State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China., Zhang J; State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China., Zeng D; State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China., Wang C; State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China., Xue Z; State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China., Zhang M; State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China., Tian Z; State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China., Di Z; State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.

Publikováno v: Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Dec; Vol. 20 (51), pp. e2403187. Date of Electronic Publication: 2024 Aug 02.