Zobrazeno 1 - 3
of 3
pro vyhledávání: '"W. E. Davern"'
Publikováno v:
IEEE Transactions on Electron Devices. 27:170-175
InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25bed6e8e9d92886a4a983551900bd36
https://doi.org/10.1109/t-ed.1980.19836
https://doi.org/10.1109/t-ed.1980.19836
Autor:
T. C. Brusgard, W. E. Davern, John M. Swab, Martin D. Gibbons, R. W. Aldrich, Michael L. Winn
Publikováno v:
SPIE Proceedings.
This paper reviews the status of two Indium Antimonide Charge Injection Device (CID) focal planes, one composed of multiple line arrays, the other made with an area array using random access addressing. After an introduction to CID operation, factors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::621e9a6e71ecd0c6818ecb16995b8c46
https://doi.org/10.1117/12.958703
https://doi.org/10.1117/12.958703
Publikováno v:
Recent Advances in TV Sensors and Systems.
This paper describes the factors governing the Performance Efficiency (PE) of Indium Antimonide Charge Injection Devices (CID) arrays. Factors influencing PE in both line and area arrays are considered and compared to experimental results. An importa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdc7cd2292967921c2f00e29d7f2a209
https://doi.org/10.1117/12.958137
https://doi.org/10.1117/12.958137