Zobrazeno 1 - 10
of 106
pro vyhledávání: '"W. Dusi"'
Publikováno v:
Scopus-Elsevier
The compensation process in semi-insulating CdTe-based compounds is known to be related to the interaction among shallow and deep levels induced by impurities, grown-in lattice defects and by their complexes. We have carried out Photo-Induced Current
Publikováno v:
Journal of Applied Physics. 94:3135-3142
We present a study of the effects of high and low energy neutron irradiation on CdTe and CdZnTe high resistivity detector grade material. The evolution of the defect states under increasing irradiation fluence has been monitored by means of photoindu
Autor:
Natalia Auricchio, W. Dusi, P. Angelotti, Gianni Landini, C. Moroni, Ariano Donati, Dante Bollini
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 455:470-475
A new type of hand-held non-imaging intraoperative γ-probe, characterized by two detection systems each based on a square array 1 cm2 in size of CdTe semiconductor crystals, is presented. The detectors are mounted at the end of two long arms of a to
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 448:531-536
The performance of an improved intraoperative γ-probe for radioassisted oncological surgery is presented and discussed. The probe is based on a square array of four 5×5 mm 2 coplanar CdTe room temperature semiconductor detectors and each detector h
Publikováno v:
Journal of Applied Physics. 89:4664-4666
The properties peculiar to high resistivity CdTe:Cl are of great interest because of its application as a radiation detector. The compensation process responsible for the materials semi-insulating character implies the presence in the lattice of impu
Publikováno v:
Applied Physics Letters. 77:3212-3214
The behavior of detector-grade Cd0.9Zn0.1Te in a radiation-hostile environment has been investigated by studying the effects on the material defective states induced by γ irradiation. The detector performance is strongly affected by the presence of
Autor:
ZANARINI, MARTINA, CAVALLINI, ANNA, FRABONI, BEATRICE, P. Chirco, W. Dusi, N. Auricchio, P. Siffert, M. Bianconi
An experimental investigation of the radiation damage induced on CdTe and CdZnTe semiconductor detectors has been performed by exposing a set of samples to increasing doses of 2 MeV protons produced by a 1.7 MV Tandetron accelerator. The modification
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::e4518c4ac56fbb82f1f3e93717cc1c89
http://hdl.handle.net/11585/16811
http://hdl.handle.net/11585/16811
Publikováno v:
LXXXIX Congresso Nazionale della Società Italiana di Fisica, Parma, 2003
info:cnr-pdr/source/autori:S. Vitulli, A. Cola, A. Donati, W. Dusi, G. Landini, E. Perillo, G. Ventura/congresso_nome:LXXXIX Congresso Nazionale della Società Italiana di Fisica/congresso_luogo:Parma/congresso_data:2003/anno:2003/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:S. Vitulli, A. Cola, A. Donati, W. Dusi, G. Landini, E. Perillo, G. Ventura/congresso_nome:LXXXIX Congresso Nazionale della Società Italiana di Fisica/congresso_luogo:Parma/congresso_data:2003/anno:2003/pagina_da:/pagina_a:/intervallo_pagine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::210fe03786cf97536633eb6d1383307b
https://publications.cnr.it/doc/99314
https://publications.cnr.it/doc/99314