Zobrazeno 1 - 10
of 49
pro vyhledávání: '"W. De Bosscher"'
Autor:
A. Kronenberger, Thomas Melzig, Michael Siemers, Bruno K. Meyer, Andreas Pflug, Volker Sittinger, J. Oberste Berghaus, Christina Schulz, W. De Bosscher
Publikováno v:
Surface and Coatings Technology. 267:75-80
In the last years, amorphous oxide films like indium gallium zinc oxide (IGZO) received increasing attention as channel layers in thin film transistors (TFTs). First IGZO-based devices are being successfully introduced into the display market. Howeve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::374663479a1e02c2a2105418647d9dc0
https://doi.org/10.1016/j.surfcoat.2014.12.014
https://doi.org/10.1016/j.surfcoat.2014.12.014
Publikováno v:
Society of Vacuum Coaters 58th (2015) Annual Technical Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03e0d1f2f4aceb873da909f9d50deb7d
https://doi.org/10.14332/svc15.proc.1944
https://doi.org/10.14332/svc15.proc.1944
Publikováno v:
Vacuum. 74:353-358
We present a model for the DC planar magnetron discharge that separates and simplifies as much as possible the different processes occurring. A crucial part of a magnetron discharge simulation is the motion of the high-energy electrons and the result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22b74ad7a04fd7f34d9421d2ea6e11c8
https://doi.org/10.1016/j.vacuum.2004.01.014
https://doi.org/10.1016/j.vacuum.2004.01.014
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:1218-1224
A simplified model for the direct current planar magnetron discharge allowing one to simulate the pressure dependence over a wide range is presented. For sufficiently strong magnetic fields, the high energy electrons (HEE), the electrons that are res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5044b437bd12dda259aa30a34c396225
https://doi.org/10.1116/1.1572169
https://doi.org/10.1116/1.1572169
Publikováno v:
Vacuum. 70:29-35
In this paper we describe a simple two-dimensional model that allows the study of the individual secondary electron orbits in a DC planar magnetron discharge. Emphasis is on the recapture of secondary electrons by the target, which is enabled by thei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03e2b3805d0f6a2f9cd9e40b9c5cd078
https://doi.org/10.1016/s0042-207x(02)00664-4
https://doi.org/10.1016/s0042-207x(02)00664-4
Publikováno v:
Society of Vacuum Coaters 56th (2013) Annual Technical Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7d3764acf1a03f8bf9ab97dd415336d
https://doi.org/10.14332/svc13.proc.1036
https://doi.org/10.14332/svc13.proc.1036
Autor:
B. Deweerdt, R. J. Schreutelkamp, Jan Vanhellemont, W. De Bosscher, R. L. Van Meirhaeghe, Karen Maex, L. van Meirhaeghe, W. Coppye, Anne Lauwers
Publikováno v:
Journal of Materials Research. 8:3111-3121
The formation of ultrathin (≤20 nm) and smooth CoSi2 layers on c–Si substrates has been studied by using a one- and a two-step RTP silicidation method. Pinhole-free silicide layers with a thickness down to ∼10–12 nm were formed on n−, n+, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93805f244e93089687e8708d72a6ca23
https://doi.org/10.1557/jmr.1993.3111
https://doi.org/10.1557/jmr.1993.3111
Publikováno v:
Applied Surface Science. 73:295-304
Since aluminum is the most widely used material for IC metallization, a good understanding of its properties under varying conditions is a necessity. This article discusses the properties of AlSi(1%)Cu(0.5%) layers sputtered in a cluster tool at diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::249f1651976adc8beae9c327d01d0255
https://doi.org/10.1016/0169-4332(93)90183-c
https://doi.org/10.1016/0169-4332(93)90183-c
Autor:
W.H. Laflère, R. L. Van Meirhaeghe, W. De Bosscher, Felix Cardon, Rob Schreutelkamp, A.S. Vercaemst
Publikováno v:
Solid-State Electronics. 36:753-759
Schottky barriers have been made by depositing Ti or TiSi 2 on sputter etch cleaned p -Si substrates. Different kinds of defects are found to be introduced by sputter etching. A first class of defects are B-H complexes extending about 1 μm into Si a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::278e35f382b1009fd7550f478a7c833c
https://doi.org/10.1016/0038-1101(93)90246-m
https://doi.org/10.1016/0038-1101(93)90246-m
Publikováno v:
Solid-State Electronics. 34:827-834
Schottky barriers have been made by evaporation of Ti on p-Si and subsequent rapid thermal processing in N2 (temperature range from 100 to 1200°C). Our former results concerning the silidication of the native SiOx layer and TiSi2 formation could be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ef52ae0686563dbd2e5ee7f71935211
https://doi.org/10.1016/0038-1101(91)90228-q
https://doi.org/10.1016/0038-1101(91)90228-q