Zobrazeno 1 - 10
of 28
pro vyhledávání: '"W. Daumann"'
In this paper a new direct evaluation technique for the small-signal equivalent circuit of AlGaAs/GaAs Heterojunction Bipolar Transistors is presented. Based on the known hot and cold measurement technique, all small-signal equivalent circuit element
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f644b7b2b79a2ed0e95e6339242afaf
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0012074844
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0012074844
Autor:
P. Ellrodt, W. Brockerhoff, Franz-Josef Tegude, R.M. Bertenburg, Ralf Reuter, W. Molls, W. Daumann, U. Auer
Publikováno v:
IEEE Electron Device Letters. 17:488-490
InAlAs/InGaAs dual-gate-HFETs (DGHFETs) and single-gate-HFETs (SGHFETs) have been fabricated and characterized with special emphasis on reducing the impact ionization. For the first time it is shown that in the case of the DGHFET, due to the second g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7ec999bde8c0f58925092bc8fb9d100
https://doi.org/10.1109/55.537084
https://doi.org/10.1109/55.537084
Autor:
U. Auer, Franz-Josef Tegude, W. Daumann, R.M. Bertenburg, Ralf Reuter, W. Brockerhoff, W. Molls
Publikováno v:
Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
Demonstrates that using a Dual-Gate-HFET (DGHFET) as a cascode instead of a conventional InAlAs/lnGaAs Single-Gate HFET (SGHFET) impact ionization itself can be prevented without degradation of the DC- and RF-performance of the device, and consequent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a884bd8df3100a74079e9f948d9594fd
https://doi.org/10.1109/iciprm.1996.492282
https://doi.org/10.1109/iciprm.1996.492282
Autor:
V. Staroselsky, T. Schlichter, E. Bushehri, W. Daumann, M. Agethen, Franz-Josef Tegude, V. Bratov, W. Brockerhoff, A. Brennemann, R.M. Bertenburg
Publikováno v:
ICECS
This paper describes the InP-based HFET technology for the implementation of high bitrate logic gates. A novel logic gate configuration is presented based on depletion mode HFETs (DHFET) using a nonlinear negative feedback (NNFB) for optimized high s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1686aff48f631070f807e38a88cccccc
https://doi.org/10.1109/icecs.1998.814016
https://doi.org/10.1109/icecs.1998.814016
Publikováno v:
Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.
Regardless of the conventional advantages (higher MSG, higher f/sub max/) of the dual-gate HFET-cascode in comparison to its single-gate counterpart, new properties of the three-port device in the InAlAs/InGaAs/InP-system are presented by extended dc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::023cb2b0832bf0a5c3721e3b01098342
https://doi.org/10.1109/iciprm.1997.600084
https://doi.org/10.1109/iciprm.1997.600084
Autor:
Franz-Josef Tegude, K. Heime, U. Auer, Jürgen Kluth, Jürgen Berntgen, W. Daumann, Alexander Behres
The 1/ f noise of various InGaAs layers lattice matched to InP is investigated systematically at room temperature. To elucidate the origin of the 1/ f noise in this type of III–V compound semiconductor, thick n-type doped InGaAs layers, typical InP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::277a047e7349d6b17d2c102323a5f5b3
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0034325621
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0034325621
Autor:
U. Auer, Teck Leong Lim, K. Heime, Arvydas Matulionis, Franz-Josef Tegude, W. Daumann, Jürgen Berntgen
The 1/f noise of 10 different ungated 2DEG structures based on InP substrates with InGaAs channels was investigated in the frequency range from 0.4 Hz to 100 kHz at temperatures between 80 K and 320 K. In spite of various channel designs (with mobili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e1e1a70bcd3941b7bcccb36a1433ae7
The 1/f noise of various InP-based two-dimensional electron gas (2DEG) structures with InGaAs channels was investigated at room temperature in the frequency range from 0.4 Hz to 100 kHz. The experimental results on the gate-bias dependent 1/f noise i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8954fa96593f43fef42a5c0ee088010a
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0032741333
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0032741333
Autor:
T. Breder, Dominique Schreurs, Ralf Reuter, Franz-Josef Tegude, W. Brockerhoff, W. Daumann, K. van der Zanden
A consistent small-signal and RF-noise equivalent circuit for Dual-Gate Heterostructure Field Effect Transistors, including the influence of impact ionisation and gate-leakage current on the electronic properties, is presented. The capability of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7cf060d497f18158cf644b28e82df7b
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84897568817
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84897568817
Publikováno v:
Charged Particle Optics III.
We present a new resist and exposure strategy applicable to the fabrication of sub-micron gate-length heterostructure field-effect transistors (HFET) with T-shaped (mushroom) gate contacts. Using selected polymethylmethacrylate (PMMA) resists as well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daf97ced4305ae5a106a6c7c1e771a70
https://doi.org/10.1117/12.279393
https://doi.org/10.1117/12.279393