Zobrazeno 1 - 10
of 57
pro vyhledávání: '"W. D. Westwood"'
Autor:
G. O. Este, W. D. Westwood, John Preston Arrington, F. R. Shepherd, Wendell William Moyer, J. P. D. Cook, Stephen F. Powell, J. Nurse
Publikováno v:
Applied Optics. 37:1220
Acrylate-based optical waveguides have been fabricated with optical loss of 0.5 dB/cm at 1300 nm by means of a new material system that ensures stable optical and mechanical properties over a wide temperature range. No increase in loss was measured a
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 6:1642-1645
WSix films for use as gates in a GaAs‐based self‐aligned gate field‐effect transistor (FET) process were formed by sequential sputter deposition of multiple layers of W and Si. The power applied to the W‐ and Si‐opposed planar magnetron tar
Autor:
W. D. Westwood
Publikováno v:
Journal of Vacuum Science and Technology. 15:1-9
The scattering of sputtered atoms by the sputtering gas has been modelled to obtain values for the distances which the atoms travel normal to the sputtering target before their energies are reduced to the thermal energy of the gas. This distance incr
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:989-992
Films for capping GaAs during annealing of implant damage have been deposited by magnetron sputtering of an Al target in Ar/N2 mixtures in two systems. The N2 flow was adjusted to obtain nitride formation on the target; this required a flow rate of 5
Autor:
G. Este, W. D. Westwood
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2:1238-1247
A modified planar magnetron system has been used to dc reactively sputter Al2O3 films with optical waveguide losses of 1 dB/cm and refractive indices of 1.65±0.005 at 632.8 nm. The target and substrate are separated by two 176×45 mm graphite grid p
Publikováno v:
Nuclear Instruments and Methods. :261-265
Thin films of CdSe vacuum-deposited on Si, SiO 2 or Al 2 O 3 have been implanted with 50 keV Cr, Ar and Ne ions at doses up to 4×10 16 ions cm −2 , and changes in the film composition have been monitored by Rutherford backscattering. For films dep
Autor:
W. D. Westwood, G. Este
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 6:1845-1848
A new sputtering process with particular advantages for the deposition of dielectric films has been developed. Low‐frequency power is applied between two conducting targets which are sputtered in a reactive gas. The operation has been demonstrated
Publikováno v:
Journal of Applied Physics. 53:856-860
The relationship between current density, applied voltage, and pressure in dc diode discharges used for sputter deposition has been calculated using a model which considers the electron and ion currents within the cathode dark space. Electrons emitte
Publikováno v:
Journal of Applied Physics. 53:1193-1202
CdSe thin film transistor (TFT) structures which have been ion implanted with 50 keV 52Cr, 50 keV 27Al, or 15 keV 11B have a very steeply rising conductivity above some threshold dose and exhibit modulated transistor characteristics over certain rang
Autor:
W. D. Westwood
Publikováno v:
Journal of Vacuum Science and Technology. 11:466-471
Platinum films have been deposited by dc sputtering in an argon discharge, using plane parallel electrodes. The system was used either for diode sputtering or, by addition of a heated filament, for triode sputtering with the same geometry. Both confi