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pro vyhledávání: '"W. D. Buckley"'
Publikováno v:
Journal of The Electrochemical Society. 128:1116-1120
A high yield process will be described for fabricating large area free‐standing membranes of thickness down to 0.5 μm for use as an x‐ray lithography mask substrate. The choice of material, method of preparation, and technique for separating the
Publikováno v:
Journal of Vacuum Science and Technology. 11:675-679
We report a preliminary survey of the effects of dc substrate bias and residual gas contamination on the average composition, internal stress, electrical conductivity, and crystal structure of molybdenum films deposited by rf sputtering. We find stro
Autor:
W. D. Buckley
Publikováno v:
Applied Physics Letters. 29:743-746
A simple relaxation analysis is presented to show that the transient on characteristics of the amorphous semiconductor device are consistent with bulk filament characteristics.
Autor:
G. P. Hughes, W. D. Buckley
Publikováno v:
Journal of The Electrochemical Society. 128:1106-1111
Publikováno v:
Journal of The Electrochemical Society. 128:1111-1116
The design, operation, and performance of an experimental alignment system which is suitable for use with an x‐ray lithography exposure system will be described. The system consists of optical, mechanical, and electronic subsystems and permits alig
Autor:
W. D. Buckley, Walter Hayduk
Publikováno v:
The Canadian Journal of Chemical Engineering. 49:667-671